PDW MARTHEL

Multi-Chip Package (MCP) memory product family consisting of a parallel NAND Flash memory and a mobile Low Power SDRAM memory in one package to provide the most space effective solution.

* Status: P - mass production, S - samples, UD - under development, N - not recommended for new design, NA - not available.

Chip	Description	Density (organization)	Supply voltage [V]	Operating temperature [°C]	Package	Status *
Chip	Description	Density (organization)	Supply voltage [V]	Operating temperature [°C]	Package	Automotive	Commercial & Industrial
W71NW10GE3FW	Two parallel memories in one package: NAND Flash & LPDDR2 SDRAM (Mobile): NAND Flash: Single-Level Cell (SLC) technology bus width - 8 bits block organization, total 1024 erasable blocks block size: 64 pages page size: 2048 B + 64 B clock frequency: 29 MHz data protection in OTP area operating temperature range: industrial (I) LPDDR2: synchronous burst mode interface bus width - 32 bits double data rate for data output clock frequency: up to 400 MHz (data rate up to 800 Mbit/s/pin) 4 banks Self Refresh mode Deep Power-down mode operating temperature range: industrial (I)	NAND Flash: 1 Gbit (128Mx8) LPDDR2: 512 Mbit (16Mx32)	NAND Flash: 1.7 - 1.95 LPDDR2: VDD1 = 1.7 - 1.95 VDD2/VDDCA/VDDQ = 1.14 - 1.30	-40 – +85 (I)	BGA-162 (8x10.5x1 mm)	-	N
W71NW10HE3FW	Two parallel memories in one package: NAND Flash & LPDDR2 SDRAM (Mobile): NAND Flash: Single-Level Cell (SLC) technology bus width - 8 bits block organization, total 1024 erasable blocks block size: 64 pages page size: 2048 B + 64 B clock frequency: 29 MHz data protection in OTP area operating temperature range: industrial (I) LPDDR2: synchronous burst mode interface bus width - 32 bits double data rate for data output clock frequency: up to 400 MHz (data rate up to 800 Mbit/s/pin) 4 banks Self Refresh mode Deep Power-down mode operating temperature range: industrial (I)	NAND Flash: 1 Gbit (128Mx8) LPDDR2: 512 Mbit (16Mx32)	NAND Flash: 1.7 - 1.95 LPDDR2: VDD1 = 1.7 - 1.95 VDD2/VDDCA/VDDQ = 1.14 - 1.30	-40 – +85 (I)	BGA-162 (8x10.5x1 mm)	-	P
W71NW10HM3FW	Two parallel memories in one package: NAND Flash & LPDDR2 SDRAM (Mobile): NAND Flash: Single-Level Cell (SLC) technology bus width - 8 bits block organization, total 1024 erasable blocks block size: 64 pages page size: 2048 B + 64 B clock frequency: 29 MHz data protection in OTP area operating temperature range: industrial (I) LPDDR2: synchronous burst mode interface bus width - 32 bits double data rate for data output clock frequency: up to 400 MHz (data rate up to 800 Mbit/s/pin) 4 banks Self Refresh mode Deep Power-down mode operating temperature range: industrial (I)	NAND Flash: 1 Gbit (128Mx8) LPDDR2: 1 Gbit (32Mx32)	NAND Flash: 1.7 - 1.95 LPDDR2: VDD1 = 1.7 - 1.95 VDD2/VDDCA/VDDQ = 1.14 - 1.30	-40 – +85 (I)	BGA-162 (8x10.5x1 mm)	-	P
W71NW20GF3FW	Two parallel memories in one package: NAND Flash & LPDDR2 SDRAM (Mobile): NAND Flash: Single-Level Cell (SLC) technology bus width - 8 bits block organization, total 1024 erasable blocks block size: 64 pages page size: 2048 B + 64 B clock frequency: 40 MHz data protection in OTP area operating temperature range: industrial (I) LPDDR2: synchronous burst mode interface bus width - 32 bits double data rate for data output clock frequency: up to 400 MHz (data rate up to 800 Mbit/s/pin) 4 banks Self Refresh mode Deep Power-down mode operating temperature range: industrial (I)	NAND Flash: 2 Gbit (256Mx8) LPDDR2: 1 Gbit (32Mx32)	NAND Flash: 1.7 - 1.95 LPDDR2: VDD1 = 1.7 - 1.95 VDD2/VDDCA/VDDQ = 1.14 - 1.30	-40 – +85 (I)	BGA-162 (8x10.5x1 mm)	-	N
W71NW20KM3FW	Two parallel memories in one package: NAND Flash & LPDDR2 SDRAM (Mobile): NAND Flash: Single-Level Cell (SLC) technology bus width - 8 bits block organization, total 2048 erasable blocks block size: 64 pages page size: 2048 B + 128 B clock frequency: 40 MHz data protection in OTP area operating temperature range: industrial (I) LPDDR2: synchronous burst mode interface bus width - 32 bits double data rate for data output clock frequency: up to 400 MHz (data rate up to 800 Mbit/s/pin) 4 banks Self Refresh mode Deep Power-down mode operating temperature range: industrial (I)	NAND Flash: 2 Gbit (256Mx8) LPDDR2: 1 Gbit (32Mx32)	NAND Flash: 1.7 - 1.95 LPDDR2: VDD1 = 1.7 - 1.95 VDD2/VDDCA/VDDQ = 1.14 - 1.30	-40 – +85 (I)	BGA-162 (8x10.5x1 mm)	-	N
W71NW20KJ3FW	Two parallel memories in one package: NAND Flash & LPDDR2 SDRAM (Mobile): NAND Flash: Single-Level Cell (SLC) technology bus width - 8 bits block organization, total 2048 erasable blocks block size: 64 pages page size: 2048 B + 128 B clock frequency: 40 MHz data protection in OTP area operating temperature range: industrial (I) LPDDR2: synchronous burst mode interface bus width - 32 bits double data rate for data output clock frequency: up to 400 MHz (data rate up to 800 Mbit/s/pin) 4 banks Self Refresh mode Deep Power-down mode operating temperature range: industrial (I)	NAND Flash: 2 Gbit (256Mx8) LPDDR2: 2 Gbit (64Mx32)	NAND Flash: 1.7 - 1.95 LPDDR2: VDD1 = 1.7 - 1.95 VDD2/VDDCA/VDDQ = 1.14 - 1.30	-40 – +85 (I)	BGA-162 (8x10.5x1 mm)	-	N
W71NW42KJ3FW	Two parallel memories in one package: NAND Flash & LPDDR2 SDRAM (Mobile): NAND Flash: Single-Level Cell (SLC) technology bus width - 8 bits block organization, total 2048 erasable blocks block size: 64 pages page size: 4096 B + 256 B clock frequency: 40 MHz data protection in OTP area operating temperature range: industrial (I) LPDDR2: synchronous burst mode interface bus width - 32 bits double data rate for data output clock frequency: up to 400 MHz (data rate up to 800 Mbit/s/pin) 4 banks Self Refresh mode Deep Power-down mode operating temperature range: industrial (I)	NAND Flash: 4 Gbit (512Mx8) LPDDR2: 2 Gbit (64Mx32)	NAND Flash: 1.7 - 1.95 LPDDR2: VDD1 = 1.7 - 1.95 VDD2/VDDCA/VDDQ = 1.14 - 1.30	-40 – +85 (I)	BGA-162 (8x10.5x1.8 mm)	-	N

PDW MARTHEL ul. Sosnowa 24-5 Bielany Wrocławskie 55-040 Kobierzyce
tel. (71) 311 07 11 fax: (71) 311 07 13 marthelinfo@marthel.pl
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