Parallel SLC NAND Flash

A family of industry standard Parallel Single-Level Cell (SLC) NAND Flash Memories produced in 46 nm technology. They are fully compatible with the SLC NAND products available in the industry from other suppliers.
All ICs are RoHS compliant.

* Status: P - mass production, S - samples, UD - under development, N - not recommended for new design, NA - not available.

Chip Description Density
(organization) 		Clock
  frequency   		Random
read time
[µs] 		Supply
  voltage  
[V] 		Operating
temperature
[°C] 		   Package    Status *
Automotive Commercial
& Industrial
W29N01HV
  • Single-Level Cell (SLC) technology
  • bus width - 8 bits
  • 1- or 4-bit ECC
  • block organization, total 1024 erasable blocks
  • block size: 64 pages
  • page size: 2048 B + 64 B
  • sequential read cycle: 25 ns
  • page program time: 250 µs
  • block erase time: 2 ms
  • standard ONFI NAND command set
  • write protection
  • block lock feature
  • data protection in OTP area
  • endurance 100,000 erase/program cycles
  • data retention: more than 10 years
  • low power consumption, standby current typ. 10 µA
  • operating temperature range: industrial (I), automotive (A)
  • compliance with AEC-Q100 automotive specification
 1 Gbit
(128Mx8)		 40 MHz 25 2.7 – 3.6 -40 – +85 (I)

Automotive:
-40 – +105 (A)
-40 – +115		 TSOP-48
VFBGA-48 8x6.5 mm		 P P
W29N01HZ
  • Single-Level Cell (SLC) technology
  • bus width - 8 bits
  • 1-bit ECC
  • block organization, total 1024 erasable blocks
  • block size: 64 pages
  • page size: 2048 B + 64 B
  • sequential read cycle: 25 ns
  • page program time: 250 µs
  • block erase time: 2 ms
  • standard ONFI NAND command set
  • write protection
  • block lock feature
  • data protection in OTP area
  • endurance: 100,000 erase/program cycles
  • data retention: more than 10 years
  • low power consumption, standby current typ. 10 µA
  • operating temperature range: industrial (I), automotive (A)
  • compliance with AEC-Q100 automotive specification
 1 Gbit
(128Mx8)		 40 MHz 25 1.7 – 1.95 -40 – +85 (I)

Automotive:
-40 – +105 (A)
-40 – +115		 TSOP-48
VFBGA-48 8x6.5 mm
VBGA-63 9x11 mm		 S P
W29N01HW
  • Single-Level Cell (SLC) technology
  • bus width - 16 bits
  • 1-bit ECC
  • block organization, total 1024 erasable blocks
  • block size: 64 pages
  • page size: 2048 B + 64 B
  • sequential read cycle: 25 ns
  • page program time: 250 µs
  • block erase time: 2 ms
  • standard ONFI NAND command set
  • write protection
  • block lock feature
  • data protection in OTP area
  • endurance: 100,000 erase/program cycles
  • data retention: more than 10 years
  • low power consumption, standby current typ. 10 µA
  • temperature range: industrial (I), automotive (B, A)
  • compliance with AEC-Q100 automotive specification
 1 Gbit
(64Mx16)		 40 MHz 25 1.7 – 1.95 -40 – +85 (I)

Automotive:
-40 – +85 (B)
-40 – +105 (A)		 VFBGA-48 8x6.5 mm
VBGA-63 9x11 mm		 - P
W29N02KV
  • Single-Level Cell (SLC) technology
  • bus width - 8 bits
  • 4-bit ECC
  • block organization, total 2048 erasable blocks
  • block size: 64 pages
  • page size: 2048 B + 64 B
  • sequential read cycle: 25 ns
  • page program time: 250 µs
  • block erase time: 2 ms
  • standard ONFI NAND command set
  • write protection
  • block lock feature
  • data protection in OTP area
  • endurance 100,000 erase/program cycles
  • data retention: more than 10 years
  • low power consumption, standby current typ. 10 µA
  • operating temperature range: industrial (I), industrial plus (J)
 2 Gbit
(256Mx8)		 40 MHz 25 2.7 – 3.6 -40 – +85 (I)
-40 – +105 (J)		 VFBGA-48 8x6,5 mm
VFBGA-63 9x11 mm
TSOP-48		 - P
W29N02KZ
  • Single-Level Cell (SLC) technology
  • bus width - 8 bits
  • 1-bit ECC
  • block organization, total 2048 erasable blocks
  • block size: 64 pages
  • page size: 2048 B + 64 B
  • sequential read cycle: 25 ns
  • page program time: 250 µs
  • block erase time: 2 ms
  • standard ONFI NAND command set
  • write protection
  • block lock feature
  • data protection in OTP area
  • endurance: 100,000 erase/program cycles
  • data retention: more than 10 years
  • low power consumption, standby current typ. 10 µA
  • operating temperature range: industrial (I), industrial plus (J)
 2 Gbit
(256Mx8)		 40 MHz 25 1.7 – 1.95 -40 – +85 (I)
-40 – +105 (J)		 VFBGA-48 8x6,5 mm
VFBGA-63 9x11 mm
TSOP-48		 - P
W29N02GV
  • Single-Level Cell (SLC) technology
  • bus width - 8 bits
  • 1- or 4-bit ECC
  • block organization, total 2048 erasable blocks
  • block size: 64 pages
  • page size: 2048 B + 64 B
  • sequential read cycle: 25 ns
  • page program time: 250 µs
  • block erase time: 2 ms
  • standard ONFI NAND command set
  • write protection
  • block lock feature
  • data protection in OTP area
  • endurance 100,000 erase/program cycles
  • data retention: more than 10 years
  • low power consumption, standby current typ. 10 µA
  • operating temperature range: industrial (I), automotive (A)
  • compliance with AEC-Q100 automotive specification
 2 Gbit
(256Mx8)		 40 MHz 25 2.7 – 3.6 -40 – +85 (I)

Automotive:
-40 – +105 (A)
-40 – +115		 TSOP-48
VFBGA-63 9x11 mm		 P P
W29N02GZ
  • Single-Level Cell (SLC) technology
  • bus width - 8 bits
  • 1- or 4-bit ECC
  • block organization, total 2048 erasable blocks
  • block size: 64 pages
  • page size: 2048 B + 64 B
  • sequential read cycle: 25 ns
  • page program time: 250 µs
  • block erase time: 2 ms
  • standard ONFI NAND command set
  • write protection
  • block lock feature
  • data protection in OTP area
  • endurance: 100,000 erase/program cycles
  • data retention: more than 10 years
  • low power consumption, standby current typ. 10 µA
  • operating temperature range: industrial (I), automotive (A)
  • compliance with AEC-Q100 automotive specification
 2 Gbit
(256Mx8)		 29 MHz 25 1.7 – 1.95 -40 – +85 (I)

Automotive:
-40 – +105 (A)
-40 – +115		 TSOP-48
VFBGA-63 9x11 mm		 S P
W29N02GW
  • Single-Level Cell (SLC) technology
  • bus width - 16 bits
  • 1- or 4-bit ECC
  • block organization, total 2048 erasable blocks
  • block size: 64 pages
  • page size: 2048 B + 64 B
  • sequential read cycle: 25 ns
  • page program time: 250 µs
  • block erase time: 2 ms
  • standard ONFI NAND command set
  • write protection
  • block lock feature
  • data protection in OTP area
  • endurance: 100,000 erase/program cycles
  • data retention: more than 10 years
  • low power consumption, standby current typ. 10 µA
  • operating temperature range: industrial (I), industrial plus (J)
 2 Gbit
(128Mx16)		 29 MHz 25 1.7 – 1.95 -40 – +85 (I)
-40 – +105 (J)		 VFBGA-63 9x11 mm - P
W29N04KZ
  • Single-Level Cell (SLC) technology
  • bus width - 8 bits
  • block organization, total 4096 erasable blocks
  • block size: 64 pages
  • page size: 2048 B + 64 B
  • page program time: 250 µs
  • block erase time: 2 ms
  • standard ONFI NAND command set
  • write protection
  • block lock feature
  • data protection in OTP area
  • endurance: 100,000 erase/program cycles
  • data retention: more than 10 years
  • low power consumption, standby current typ. 10 µA for industrial or 20 µA for industrial plus
  • operating temperature range: industrial (I), industrial plus (J)
 4 Gbit
(512Mx8)		 40 MHz 25 1.7 – 1.95 -40 – +85 (I)
-40 – +105 (J)		 TSOP-48
VFBGA-63 9x11 mm		 - P
W29N04GV
  • Single-Level Cell (SLC) technology
  • bus width - 8 bits
  • 1- or 4-bit ECC
  • block organization, total 4096 erasable blocks
  • block size: 64 pages
  • page size: 2048 B + 64 B
  • sequential read cycle: 25 ns
  • page program time: 250 µs
  • block erase time: 2 ms
  • standard ONFI NAND command set
  • write protection
  • block lock feature
  • data protection in OTP area
  • endurance 100,000 erase/program cycles
  • data retention: more than 10 years
  • low power consumption, standby current typ. 10 µA
  • operating temperature range: industrial (I), automotive (A)
  • compliance with AEC-Q100 automotive specification
 4 Gbit
(512Mx8)		 40 MHz 25 2.7 – 3.6 -40 – +85 (I)

Automotive:
-40 – +105 (A)
-40 – +115		 TSOP-48
VFBGA-63 9x11 mm		 P P
W29N04GZ
  • Single-Level Cell (SLC) technology
  • bus width - 8 bits
  • 1- or 4-bit ECC
  • block organization, total 4096 erasable blocks
  • block size: 64 pages
  • page size: 2048 B + 64 B
  • sequential read cycle: 35 ns
  • page program time: 250 µs
  • block erase time: 2 ms
  • standard ONFI NAND command set
  • write protection
  • block lock feature
  • data protection in OTP area
  • endurance: 100,000 erase/program cycles
  • data retention: more than 10 years
  • low power consumption, standby current typ. 10 µA
  • operating temperature range: industrial (I), automotive (A)
  • compliance with AEC-Q100 automotive specification
 4 Gbit
(512Mx8)		 40 MHz 25 1.7 – 1.95 -40 – +85 (I)

Automotive:
-40 – +105 (A)
-40 – +115		 TSOP-48
VFBGA-63 9x11 mm		 S P
W29N04GW
  • Single-Level Cell (SLC) technology
  • bus width - 16 bits
  • 1- or 4-bit ECC
  • block organization, total 4096 erasable blocks
  • block size: 64 pages
  • page size: 2048 B + 64 B
  • sequential read cycle: 35 ns
  • page program time: 250 µs
  • block erase time: 2 ms
  • standard ONFI NAND command set
  • write protection
  • block lock feature
  • data protection in OTP area
  • endurance: 100,000 erase/program cycles
  • data retention: more than 10 years
  • low power consumption, standby current typ. 10 µA
  • operating temperature range: industrial (I), industrial plus (J)
 4 Gbit
(256Mx16)		 40 MHz 25 1.7 – 1.95 -40 – +85 (I)
-40 – +105 (J)		 VFBGA-63 9x11 mm - P
W29N08GV
  • Single-Level Cell (SLC) technology
  • bus width - 8 bits
  • 1- or 4-bit ECC
  • block organization, total 8192 erasable blocks
  • block size: 64 pages
  • page size: 2048 B + 64 B
  • random read cycle: 25 ns
  • sequential read cycle: 25 ns
  • page program time: 250 µs
  • block erase time: 2 ms
  • standard ONFI NAND command set
  • write protection
  • block lock feature
  • data protection in OTP area
  • endurance 100,000 erase/program cycles
  • data retention: more than 10 years
  • low power consumption, standby current typ. 20 µA
  • operating temperature range: industrial (I), automotive (B, A)
  • compliance with AEC-Q100 automotive specification
 8 Gbit
(1024Mx8)		 40 MHz 25 2.7 – 3.6 -40 – +85 (I)

Automotive:
-40 – +85 (B)
-40 – +105 (A)
-40 – +115		 TSOP-48
VFBGA-63 9x11 mm		 P P
W29N08GZ
  • Single-Level Cell (SLC) technology
  • bus width - 8 bits
  • 1- or 4-bit ECC
  • block organization, total 8192 erasable blocks
  • block size: 64 pages
  • page size: 2048 B + 64 B
  • sequential read cycle: 35 ns
  • page program time: 250 µs
  • block erase time: 2 ms
  • standard ONFI NAND command set
  • write protection
  • block lock feature
  • data protection in OTP area
  • endurance: 100,000 erase/program cycles
  • data retention: more than 10 years
  • low power consumption, standby current typ. 20 µA
  • operating temperature range: industrial (I), automotive (B, A)
  • compliance with AEC-Q100 automotive specification
 8 Gbit
(1024Mx8)		 40 MHz 25 1.7 – 1.95 -40 – +85 (I)

Automotive:
-40 – +85 (B)
-40 – +105 (A)		 TSOP-48
VFBGA-63 9x11 mm		 UD P
W29N08GW
  • Single-Level Cell (SLC) technology
  • bus width - 16 bits
  • 1- or 4-bit ECC
  • block organization, total 8192 erasable blocks
  • block size: 64 pages
  • page size: 2048 B + 64 B
  • sequential read cycle: 35 ns
  • page program time: 250 µs
  • block erase time: 2 ms
  • standard ONFI NAND command set
  • write protection
  • block lock feature
  • data protection in OTP area
  • endurance: 100,000 erase/program cycles
  • data retention: more than 10 years
  • low power consumption, standby current: 20 µA
  • operating temperature range: industrial (I), industrial plus (J)
 8 Gbit
(512Mx16)		 40 MHz 25 1.7 – 1.95 -40 – +85 (I)
-40 – +105 (J)		 VFBGA-63 9x11 mm - P




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