DDR3 SDRAM

High-speed Double-Data-Rate Synchronous DRAMs generation 3 which achieve greater data speed than DDR2 SDRAMs by higher clock rate.
All ICs are RoHS compliant.

* Status: P - mass production, S - samples, UD - under development, N - not recommended for new design.

Chip Description Density
(organization) 		Transfer rate
[Mbit/s/pin] 		Supply
  voltage  
[V] 		Operating
temperature
[°C] 		   Package    Status *
Automotive Commercial
& Industrial
W631GG6NB
  • density: 1 Gbit
  • speed grades: -09/-09I/-11/-11I
  • transfer rates up to 2133 Mb/sec/pin (DDR3-2133)
  • CAS Latency: 6, 7, 8, 9, 10, 11, 13, 14
  • programmable read burst ordering: interleaved or sequential
  • burst length: 8 (fixed order), 4 (switched order)
  • differential clock inputs
  • data masks for write data
  • Refresh, Auto Refresh, Self Refresh and Partial Array Self Refresh modes
  • Power-down mode
  • operating temperature range: commercial, industrial (I), automotive
  • compliance with AEC-Q100 automotive specification
 1 Gbit
(64Mx16, 8 banks)		 2133 (-9/-9I/-9J: DDR3-2133)

1866 (-11/-11I/-11J: DDR3-1866)		 1.5±0.075 0 – +95
-40 – +95 (I)

Automotive		 VFBGA-96
(7.5x13 mm)		 P N
W631GG8NB 1 Gbit
(128Mx8, 8 banks)		 2133 (-9/-9I/-9J: DDR3-2133)

1866 (-11/-11I/-11J: DDR3-1866)		 1.5±0.075 0 – +95
-40 – +95 (I)

Automotive		 VFBGA-78
(8x10.5 mm)		 P N
W631GU6NB
  • density: 1 Gbit
  • speed grades: -09/-09I/-11/-11I
  • transfer rates up to 2133 Mb/sec/pin (DDR3-2133)
  • CAS Latency: 6, 7, 8, 9, 10, 11, 13, 14
  • programmable read burst ordering: interleaved or sequential
  • burst length: 8 (fixed order), 4 (switched order)
  • differential clock inputs
  • data masks for write data
  • Refresh, Auto Refresh, Self Refresh and Partial Array Self Refresh modes
  • Power-down mode
  • operating temperature range: commercial, industrial (I), automotive
  • compliance with AEC-Q100 automotive specification
 1 Gbit
(64Mx16, 8 banks)		 2133 (-9/-9I/-9J: DDR3-2133)

1866 (-11/-11I/-11J: DDR3-1866)		 1.283 – 1.45 0 – +95
-40 – +95 (I)

Automotive		 VFBGA-96
(7.5x13 mm)		 P N
W631GU8NB 1 Gbit
(128Mx8, 8 banks)		 2133 (-9/-9I/-9J: DDR3-2133)

1866 (-11/-11I/-11J: DDR3-1866)		 1.283 – 1.45 0 – +95
-40 – +95 (I)

Automotive		 VFBGA-78
(8x10.5 mm)		 P N
W631GU6RB
  • density: 1 Gbit
  • speed grades: -09/-09I/-11/-11I
  • transfer rates up to 2133 Mb/sec/pin (DDR3-2133)
  • CAS Latency: 6, 7, 8, 9, 10, 11, 13, 14
  • programmable read burst ordering: interleaved or sequential
  • burst length: 8 (fixed order), 4 (switched order)
  • differential clock inputs
  • data masks for write data
  • Refresh, Auto Refresh, Self Refresh and Partial Array Self Refresh modes
  • Power-down mode
  • operating temperature range: commercial, industrial (I), automotive
  • compliance with AEC-Q100 automotive specification
 1 Gbit
(64Mx16, 8 banks)		 2133 (-9/-9I/-9J: DDR3-2133)

1866 (-11/-11I/-11J: DDR3-1866)		 1.283 – 1.45 0 – +95
-40 – +95 (I)

Automotive		 VFBGA-96
(7.5x13 mm)		 S P
W631GU8RB 1 Gbit
(128Mx8, 8 banks)		 2133 (-9/-9I/-9J: DDR3-2133)

1866 (-11/-11I/-11J: DDR3-1866)		 1.283 – 1.45 0 – +95
-40 – +95 (I)

Automotive		 VFBGA-78
(8x10.5 mm)		 S P
W632GU6NB
  • density: 2 Gbit
  • speed grades: -09/-09I/-11/-11I
  • transfer rates up to 2133 Mb/sec/pin (DDR3-2133)
  • CAS Latency: 6, 7, 8, 9, 10, 11, 13, 14
  • programmable read burst ordering: interleaved or sequential
  • burst length: 8 (fixed order), 4 (switched order)
  • differential clock inputs
  • data masks for write data
  • Refresh, Auto Refresh, Self Refresh and Partial Array Self Refresh modes
  • Power-down mode
  • operating temperature range: commercial, industrial (I), automotive
  • compliance with AEC-Q100 automotive specification
 2 Gbit
(128Mx16, 8 banks)		 2133 (-9/-9I/-9J: DDR3-2133)

1866 (-11/-11I/-11J: DDR3-1866)		 1.283 – 1.45 0 – +95
-40 – +95 (I)

Automotive		 VFBGA-96
(7.5x13 mm)		 P N
W632GU8NB 2 Gbit
(256Mx8, 8 banks)		 2133 (-9/-9I/-9J: DDR3-2133)

1866 (-11/-11I/-11J: DDR3-1866)		 1.283 – 1.45 0 – +95
-40 – +95 (I)

Automotive		 VFBGA-78
(8x10.5 mm)		 P N
W632GG6NB
  • density: 2 Gbit
  • speed grades: -09/-09I/-11/-11I
  • transfer rates up to 2133 Mb/sec/pin (DDR3-2133)
  • CAS Latency: 6, 7, 8, 9, 10, 11, 13, 14
  • programmable read burst ordering: interleaved or sequential
  • burst length: 8 (fixed order), 4 (switched order)
  • differential clock inputs
  • data masks for write data
  • Refresh, Auto Refresh, Self Refresh and Partial Array Self Refresh modes
  • Power-down mode
  • operating temperature range: commercial, industrial (I), automotive
  • compliance with AEC-Q100 automotive specification
 2 Gbit
(128Mx16, 8 banks)		 2133 (-9/-9I/-9J: DDR3-2133)

1866 (-11/-11I/-11J: DDR3-1866)		 1.5±0.075 0 – +95
-40 – +95 (I)

Automotive		 VFBGA-96
(7.5x13 mm)		 P N
W632GG8NB 2 Gbit
(256Mx8, 8 banks)		 2133 (-9/-9I/-9J: DDR3-2133)

1866 (-11/-11I/-11J: DDR3-1866)		 1.5±0.075 0 – +95
-40 – +95 (I)

Automotive		 VFBGA-78
(8x10.5 mm)		 P N
W632GU6QB
  • density: 2 Gbit
  • speed grades: -09/-09I/-11/-11I
  • transfer rates up to 2133 Mb/sec/pin (DDR3-2133)
  • CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13, 14
  • programmable read burst ordering: interleaved or sequential
  • burst length: 8 (fixed order), 4 (switched order)
  • differential clock inputs
  • data masks for write data
  • Refresh, Auto Refresh, Self Refresh and Partial Array Self Refresh modes
  • Power-down mode
  • operating temperature range: commercial, industrial (I)
 2 Gbit
(128Mx16, 8 banks)		 2133 (-9/-9I/-9J: DDR3-2133)

1866 (-11/-11I/-11J: DDR3-1866)		 1.283 – 1.45 0 – +95
-40 – +95 (I)		 VFBGA-96
(7.5x13 mm)		 - N
W632GU8QB 2 Gbit
(256Mx8, 8 banks)		 2133 (-9/-9I/-9J: DDR3-2133)

1866 (-11/-11I/-11J: DDR3-1866)		 1.283 – 1.45 0 – +95
-40 – +95 (I)		 VFBGA-78
(8x10.5 mm)		 - N
W632GU6RB
  • density: 2 Gbit
  • speed grades: -09/-09I/-11/-11I
  • transfer rates up to 2133 Mb/sec/pin (DDR3-2133)
  • CAS Latency: 6, 7, 8, 9, 10, 11, 13, 14
  • programmable read burst ordering: interleaved or sequential
  • burst length: 8 (fixed order), 4 (switched order)
  • differential clock inputs
  • data masks for write data
  • Refresh, Auto Refresh, Self Refresh and Partial Array Self Refresh modes
  • Power-down mode and Active Power-Down
  • operating temperature range: commercial, industrial (I), automotive
  • compliance with AEC-Q100 automotive specification
 2 Gbit
(128Mx16, 8 banks)		 2133 (-9/-9I/-9J: DDR3-2133)

1866 (-11/-11I/-11J: DDR3-1866)		 1.283 – 1.45 0 – +95
-40 – +95 (I)

Automotive		 VFBGA-96
(7.5x13 mm)		 S P
W632GU8RB 2 Gbit
(256Mx8, 8 banks)		 2133 (-9/-9I/-9J: DDR3-2133)

1866 (-11/-11I/-11J: DDR3-1866)		 1.283 – 1.45 0 – +95
-40 – +95 (I)

Automotive		 VFBGA-78
(8x10.5 mm)		 S P
W634GU6NB
  • density: 4 Gbit
  • speed grades: -09/-09I/-11/-11I
  • transfer rates up to 2133 Mb/sec/pin (DDR3-2133)
  • CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13, 14
  • programmable read burst ordering: interleaved or sequential
  • burst length: 8 (fixed order), 4 (switched order)
  • differential clock inputs
  • data masks for write data
  • Refresh, Auto Refresh, Self Refresh and Partial Array Self Refresh modes
  • Power-down mode
  • operating temperature range: commercial, industrial (I), automotive
  • compliance with AEC-Q100 automotive specification
 4 Gbit
(256Mx16, 8 banks)		 2133 (-9/-9I: DDR3-2133)

1866 (-11/-11I: DDR3-1866)		 1.283 – 1.45 0 – +95
-40 – +95 (I)

Automotive		 VFBGA-96
(9x13 mm)		 P N
W634GU8NB 4 Gbit
(512Mx8, 8 banks)		 2133 (-9/-9I: DDR3-2133)

1866 (-11/-11I: DDR3-1866)		 1.283 – 1.45 0 – +95
-40 – +95 (I)

Automotive		 VFBGA-78
(8x10.5 mm)		 P N
W634GG6NB
  • density: 4 Gbit
  • speed grades: -09/-09I/-11/-11I
  • transfer rates up to 2133 Mb/sec/pin (DDR3-2133)
  • CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13, 14
  • programmable read burst ordering: interleaved or sequential
  • burst length: 8 (fixed order), 4 (switched order)
  • differential clock inputs
  • data masks for write data
  • Refresh, Auto Refresh, Self Refresh and Partial Array Self Refresh modes
  • Power-down mode
  • operating temperature range: commercial, industrial (I), automotive
  • compliance with AEC-Q100 automotive specification
 4 Gbit
(256Mx16, 8 banks)		 2133 (-9/-9I: DDR3-2133)

1866 (-11/-11I: DDR3-1866)		 1.5±0.075 0 – +95
-40 – +95 (I)

Automotive		 VFBGA-96
(9x13 mm)		 P N
W634GG8NB 4 Gbit
(512Mx8, 8 banks)		 2133 (-9/-9I: DDR3-2133)

1866 (-11/-11I: DDR3-1866)		 1.5±0.075 0 – +95
-40 – +95 (I)

Automotive		 VFBGA-78
(8x10.5 mm)		 P N
W634GU6QB
  • density: 4 Gbit
  • speed grades: -09/-09I/-11/-11I
  • transfer rates up to 2133 Mb/sec/pin (DDR3-2133)
  • CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13, 14
  • programmable read burst ordering: interleaved or sequential
  • burst length: 8 (fixed order), 4 (switched order)
  • differential clock inputs
  • data masks for write data
  • Refresh, Auto Refresh, Self Refresh and Partial Array Self Refresh modes
  • Power-down mode
  • operating temperature range: commercial, industrial (I)
 4 Gbit
(256Mx16, 8 banks)		 2133 (-9/-9I: DDR3-2133)

1866 (-11/-11I: DDR3-1866)		 1.283 – 1.45 0 – +95
-40 – +95 (I)		 VFBGA-96
(9x13 mm)		 - N
W634GU8QB 4 Gbit
(512Mx8, 8 banks)		 2133 (-9/-9I: DDR3-2133)

1866 (-11/-11I: DDR3-1866)		 1.283 – 1.45 0 – +95
-40 – +95 (I)		 VFBGA-78
(8x10.5 mm)		 - N
W634GU6RB
  • density: 4 Gbit
  • speed grades: -09/-09I/-11/-11I
  • transfer rates up to 2133 Mb/sec/pin (DDR3-2133)
  • CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13, 14
  • programmable read burst ordering: interleaved or sequential
  • burst length: 8 (fixed order), 4 (switched order)
  • differential clock inputs
  • data masks for write data
  • Refresh, Auto Refresh, Self Refresh and Partial Array Self Refresh modes
  • Power-down mode
  • operating temperature range: commercial, industrial (I), industrial plus (J), automotive
  • compliance with AEC-Q100 automotive specification
 4 Gbit
(256Mx16, 8 banks)		 2133 (-9/-9I: DDR3-2133)

1866 (-11/-11I: DDR3-1866)		 1.283 – 1.45 0 – +95
-40 – +95 (I)

Automotive		 VFBGA-96
(9x13 mm)		 S P
W634GU8RB
PDF
4 Gbit
(512Mx8, 8 banks)		 2133 (-9/-9I: DDR3-2133)

1866 (-11/-11I: DDR3-1866)		 1.283 – 1.45 0 – +95
-40 – +95 (I)

Automotive		 VFBGA-78
(8x10.5 mm)		 S P
W638GU6QB
  • density: 8 Gbit
  • speed grades: -09/-09I/-11/-11I
  • transfer rates up to 2133 Mb/sec/pin (DDR3-2133)
  • CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13, 14
  • programmable read burst ordering: interleaved or sequential
  • burst length: 8 (fixed order), 4 (switched order)
  • differential clock inputs
  • data masks for write data
  • Refresh, Auto Refresh, Self Refresh and Partial Array Self Refresh modes
  • Power-down mode
  • operating temperature range: commercial, industrial (I)
 8 Gbit
(512Mx16, 8 banks)		 2133 (-9/-9I: DDR3-2133)

1866 (-11/-11I: DDR3-1866)		 1.283 – 1.45 0 – +95
-40 – +95 (I)		 VFBGA-96
(9x13 mm)		 - P




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