Low Power DDR SDRAM
Low Power DDR SDRAMs (Low Power Double Data Rate SDRAMs) are memories with 1.8/1.8 V power supply, designed with specific features to reduce power consumption.
All ICs are RoHS compliant.
* Status: P - mass production, S - samples, UD - under development, N - not recommended for new design.
| Chip |
Description |
Density
(organization)
|
Clock
frequency
|
Supply
voltage
[V]
|
Operating
temperature
[°C]
|
Package
|
Status *
|
| Automotive |
Commercial
& Industrial |
W947D6HBH
 (1161 KB) - synchronous burst mode interface
- speed grades: -5, -6
- CAS Latency: 2, 3
- burst length: 2, 4, 8, 16
- 4 banks
- differential clock inputs
- data mask for write data
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended (E, G), industrial (I)
- low power consumption
|
128 Mbit
(8Mx16) |
166 MHz (-6)
200 MHz (-5) |
1.8/1.8
(VDD/VDDQ) |
Standard IDD6:
-25 – +85 (G)
Low IDD6:
-25 – +85 (E)
-40 – +85 (I) |
VFBGA-60
(8x9 mm) |
- |
N | |
W947D2HBJ
(1161 KB)
128 Mbit
(4Mx32) |
166 MHz (-6)
200 MHz (-5) |
1.8/1.8
(VDD/VDDQ) |
Standard IDD6:
-25 – +85 (G)
Low IDD6:
-25 – +85 (E)
-40 – +85 (I) |
VFBGA-90
(8x13 mm) |
- |
N | |
W948D6FBH
(963 KB)
- synchronous burst mode interface
- speed grades: -5, -6
- CAS Latency: 2, 3
- burst length: 2, 4, 8, 16
- 4 banks
- differential clock inputs
- data mask for write data
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended (E, G), industrial (I)
- low power consumption
|
256 Mbit
(16Mx16) |
166 MHz (-6)
200 MHz (-5) |
1.8/1.8
(VDD/VDDQ) |
Standard IDD6:
-25 – +85 (G)
Low IDD6:
-25 – +85 (E)
-40 – +85 (I) |
VFBGA-60
(8x9 mm) |
- |
N | |
W948D2FBJ
(963 KB)
- synchronous burst mode interface
- speed grades: -5, -6
- CAS Latency: 2, 3
- burst length: 2, 4, 8, 16
- 4 banks
- differential clock inputs
- data mask for write data
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended (E, G), industrial (I)
- low power consumption
|
256 Mbit
(8Mx32) |
166 MHz (-6)
200 MHz (-5) |
1.8/1.8
(VDD/VDDQ) |
Standard IDD6:
-25 – +85 (G)
Low IDD6:
-25 – +85 (E)
-40 – +85 (I) |
VFBGA-90
(8x13 mm) |
- |
N | |
W948D6KBH
(1057 KB)
- synchronous burst mode interface
- speed grades: -5, -6
- CAS Latency: 2, 3
- burst length: 2, 4, 8, 16
- 4 banks
- differential clock inputs
- data mask for write data
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended (E, G), industrial (I)
- low power consumption
|
256 Mbit
(16Mx16) |
166 MHz (-6)
200 MHz (-5) |
1.8/1.8
(VDD/VDDQ) |
Standard IDD6:
-25 – +85 (G)
Low IDD6:
-25 – +85 (E)
-40 – +85 (I) |
VFBGA-60
(8x9 mm) |
- |
P | |
W948V6KBH
(1089 KB)
- synchronous burst mode interface
- speed grades: -5, -6
- CAS Latency: 2, 3
- burst length: 2, 4, 8, 16
- 4 banks
- differential clock inputs
- data mask for write data
- Self Refresh mode
- Deep Self-Refresh (DSR) mode which can save 70% power compared with normal one
- Power-down and Deep Power-down modes
- operating temperature range: extended (E, G), industrial (I)
- low power consumption
|
256 Mbit
(16Mx16) |
166 MHz (-6)
200 MHz (-5) |
1.8/1.8
(VDD/VDDQ) |
Standard IDD6:
-25 – +85 (G)
Low IDD6:
-25 – +85 (E)
-40 – +85 (I) |
VFBGA-60
(8x9 mm) |
- |
N | |
W949D6KBH
(936 KB) - synchronous burst mode interface
- speed grades: -5, -6
- CAS Latency: 2, 3
- burst length: 2, 4, 8, 16
- 4 banks
- differential clock inputs
- data mask for write data
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended (E), industrial (I)
- low power consumption
|
512 Mbit
(32Mx16) |
166 MHz (-6)
200 MHz (-5) |
1.8/1.8
(VDD/VDDQ) |
-25 – +85 (E)
-40 – +85 (I) |
VFBGA-60
(8x9 mm) |
- |
N | |
W949D2KBJ
(936 KB)
512 Mbit
(16Mx32) |
166 MHz (-6)
200 MHz (-5) |
1.8/1.8
(VDD/VDDQ) |
-25 – +85 (E)
-40 – +85 (I) |
VFBGA-90
(8x13 mm) |
- |
N | |
W949D6DBH
(1071 KB) - synchronous burst mode interface
- speed grades: -5, -6
- CAS Latency: 2, 3
- burst length: 2, 4, 8, 16
- 4 banks
- differential clock inputs
- data mask for write data
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended (E), industrial (I), automotive
- compliance with AEC-Q100 automotive specification
- low power consumption
|
512 Mbit
(32Mx16) |
166 MHz (-6)
200 MHz (-5) |
1.8/1.8
(VDD/VDDQ) |
-25 – +85 (E)
-40 – +85 (I)
Automotive |
VFBGA-60
(8x9 mm) |
N |
P | |
W949D2DBJ
(1071 KB)
512 Mbit
(16Mx32) |
166 MHz (-6)
200 MHz (-5) |
1.8/1.8
(VDD/VDDQ) |
-25 – +85 (E)
-40 – +85 (I) |
VFBGA-90
(8x13 mm) |
N |
P | |
W94AD6KBH
(1142 KB) - synchronous burst mode interface
- speed grades: -5, -6
- CAS Latency: 2, 3
- burst length: 2, 4, 8, 16
- 4 banks
- differential clock inputs
- data mask for write data
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended (E), industrial (I), automotive
- compliance with AEC-Q100 automotive specification
- low power consumption
|
1 Gbit
(64Mx16) |
166 MHz (-6)
200 MHz (-5) |
1.8/1.8
(VDD/VDDQ) |
-25 – +85 (E)
-40 – +85 (I)
Automotive |
VFBGA-60
(8x9 mm) |
N |
P | |
W94AD2KBJ
(1142 KB)
1 Gbit
(32Mx32) |
166 MHz (-6)
200 MHz (-5) |
1.8/1.8
(VDD/VDDQ) |
-25 – +85 (E)
-40 – +85 (I) |
VFBGA-90
(8x13 mm) |
N |
P | |
|
