Pseudo SRAM
Pseudo SRAMs (PSRAMs) are memories consisting of a DRAM macro core with a traditional asynchronous SRAM interface. They feature fast access time and low power consumption. Comparing to traditional CMOS SRAM have a higher density, higher speed, smaller die size and DRAM compatible process.
* Status: P - mass production, S - samples, UD - under development, N - not recommended for new design.
| Chip |
Description |
Density
(organization)
|
Clock
frequency
|
Access time
[ns]
|
Supply
voltage
[V]
|
Operating
temperature
[°C]
|
Package
|
Status *
|
| Automotive |
Commercial
& Industrial |
W956D6KBK
 (1710 KB)
CellularRAM-ADM:- Address/ Data Multiplexed
- supports asynchronous and burst operations
- 4/8/16/32-word or continuous burst Read/Write mode
- deep power-down mode
- operating temperature range: industrial (I)
- low power consumption
|
64 Mbit
(4Mx16) |
133 MHz |
70 |
1.8/1.8
(VDD/VDDQ) |
-40 – +85 (I) |
WFBGA-49
(4x4 mm) |
- |
P | |
W958D6DBC
(1159 KB)
CellularRAM-ADM:- Address/ Data Multiplexed
- supports asynchronous and burst operations
- 4/8/16/32-word or continuous burst Read/Write mode
- deep power-down mode
- operating temperature range: industrial (I)
- low power consumption
|
256 Mbit
(16Mx16) |
133 MHz |
70 |
1.8/1.8
(VDD/VDDQ) |
-40 – +85 (I) |
VFBGA-54
(6x8 mm) |
- |
N | |
W968D6DAG
(1678 KB)
CellularRAM:- supports asynchronous, page and burst operations
- 4/8/16/32-word or continuous burst Read/Write mode
- deep power-down mode
- operating temperature range: industrial (I)
- low power consumption
|
256 Mbit
(16Mx16) |
133 MHz |
70 |
1.8/1.8
(VDD/VDDQ) |
-40 – +85 (I) |
VFBGA-54
(6x8 mm) |
- |
N | |
|
