Pseudo SRAM

Pseudo SRAMs (PSRAMs) are memories consisting of a DRAM macro core with a traditional asynchronous SRAM interface. They feature fast access time and low power consumption. Comparing to traditional CMOS SRAM have a higher density, higher speed, smaller die size and DRAM compatible process.

* Status: P - mass production, S - samples, UD - under development, N - not recommended for new design.

Chip Description Density
(organization) 		Clock
  frequency   		Access time
[ns] 		Supply
  voltage  
[V] 		Operating
temperature
[°C] 		   Package    Status *
Automotive Commercial
& Industrial
W956D6KBK CellularRAM-ADM:
  • Address/ Data Multiplexed
  • supports asynchronous and burst operations
  • 4/8/16/32-word or continuous burst Read/Write mode
  • deep power-down mode
  • operating temperature range: industrial (I)
  • low power consumption
 64 Mbit
(4Mx16)		 133 MHz 70 1.8/1.8
(VDD/VDDQ)		 -40 – +85 (I) WFBGA-49
(4x4-mm)		 - P
W958D6DBC CellularRAM-ADM:
  • Address/ Data Multiplexed
  • supports asynchronous and burst operations
  • 4/8/16/32-word or continuous burst Read/Write mode
  • deep power-down mode
  • operating temperature range: industrial (I)
  • low power consumption
 256 Mbit
(16Mx16)		 133 MHz 70 1.8/1.8
(VDD/VDDQ)		 -40 – +85 (I) VFBGA-54
(6x8-mm)		 - N
W968D6DAG CellularRAM:
  • supports asynchronous, page and burst operations
  • 4/8/16/32-word or continuous burst Read/Write mode
  • deep power-down mode
  • operating temperature range: industrial (I)
  • low power consumption
 256 Mbit
(16Mx16)		 133 MHz 70 1.8/1.8
(VDD/VDDQ)		 -40 – +85 (I) VFBGA-54
(6x8-mm)		 - N




HyperRAM

An improved version of the Pseudo SRAM memories, consisting of a DRAM macro core with a traditional asynchronous SRAM interface, characterized by higher speed and smaller form factor size.

* Status: P - mass production, S - samples, UD - under development, N - not recommended for new design.

Chip Description Density
(organization) 		Clock
  frequency   		Access time
[ns] 		Supply
  voltage  
[V] 		Operating
temperature
[°C] 		   Package    Status *
Automotive Commercial
& Industrial
W955K8MBY
  • HyperBus interface - low signal count, Double Data Rate (DDR)
  • 8-bit data bus
  • high speed read and write operations
  • differential clock
  • hardware Reset
  • Read-Write Data Strobe (RWDS)
  • burst operations - burst lengths 16/32/64/128 bytes
  • hybrid sleep and deep power-down modes
  • full and partial array refresh modes
  • small package
  • operating temperature ranges: industrial (I), automotive
 32 Mbit
(4Mx8)		 200 MHz 35 1.8
(VCC, VCCQ)		 -40 – +85 (I)

Automotive		 TFBGA-24
(6x8-mm)		 P P
W955N8MBY
  • HyperBus interface - low signal count, Double Data Rate (DDR)
  • 8-bit data bus
  • high speed read and write operations
  • differential clock
  • hardware Reset
  • Read-Write Data Strobe (RWDS)
  • burst operations - burst lengths 16/32/64/128 bytes
  • hybrid sleep and deep power-down modes
  • full and partial array refresh modes
  • small package
  • operating temperature ranges: industrial (I), automotive
 32 Mbit
(4Mx8)		 200 MHz 35 3.0
(VCC, VCCQ)		 -40 – +85 (I)

Automotive		 TFBGA-24
(6x8-mm)		 N N
W956D8MWS
  • HyperBus interface - low signal count, Double Data Rate (DDR)
  • 8-bit data bus
  • high speed read and write operations
  • differential clock
  • hardware Reset
  • Read-Write Data Strobe (RWDS)
  • burst operations - burst lengths 16/32/64/128 bytes
  • hybrid sleep and deep power-down modes
  • full and partial array refresh modes
  • small package
  • operating temperature ranges: industrial (I)
 64 Mbit
(8Mx8)		 200 MHz 35 1.8
(VCC, VCCQ)		 -40 – +85 (I) TFBGA-24
(6x8-mm)		 - P
W956D8MBY
  • HyperBus interface - low signal count, Double Data Rate (DDR)
  • 8-bit data bus
  • high speed read and write operations
  • differential clock
  • hardware Reset
  • Read-Write Data Strobe (RWDS)
  • burst operations - burst lengths 16/32/64/128 bytes
  • hybrid sleep and deep power-down modes
  • full and partial array refresh modes
  • small package
  • operating temperature ranges: industrial (I), automotive
 64 Mbit
(8Mx8)		 200 MHz 35 1.8
(VCC, VCCQ)		 -40 – +85 (I)

Automotive		 TFBGA-24
(6x8-mm)		 P P
W956A8MBY
  • HyperBus interface - low signal count, Double Data Rate (DDR)
  • 8-bit data bus
  • high speed read and write operations
  • differential clock
  • hardware Reset
  • Read-Write Data Strobe (RWDS)
  • burst operations - burst lengths 16/32/64/128 bytes
  • hybrid sleep and deep power-down modes
  • full and partial array refresh modes
  • small package
  • operating temperature ranges: industrial (I), automotive
 64 Mbit
(8Mx8)		 200 MHz 35 3.0
(VCC, VCCQ)		 -40 – +85 (I)

Automotive		 TFBGA-24
(6x8-mm)		 N N
W957D8MFY
  • HyperBus interface - low signal count, Double Data Rate (DDR)
  • 8-bit data bus
  • operating temperature ranges: industrial (I), automotive
 128 Mbit
(16Mx8)		 200 MHz  1.8
(VCC, VCCQ)		 -40 – +85 (I)

Automotive		 BGA-24 P P
W957D8NWS
  • HyperBus interface - low signal count, Double Data Rate (DDR)
  • 8-bit data bus
  • operating temperature ranges: industrial (I)
 128 Mbit
(16Mx8)		 200 / 250 MHz  1.8 – 1.35
(VCC, VCCQ)		 -40 – +85 (I) WLCSP - P
W957D6NBG
  • HyperBus interface - low signal count, Double Data Rate (DDR)
  • 16-bit data bus
  • operating temperature ranges: industrial (I)
 128 Mbit
(8Mx16)		 200 / 250 MHz  1.8 – 1.35
(VCC, VCCQ)		 -40 – +85 (I) BGA-49 - P
W958D8NBY
  • HyperBus interface - low signal count, Double Data Rate (DDR)
  • 8-bit data bus
  • high speed read and write operations
  • differential clock
  • hardware Reset
  • Read-Write Data Strobe (RWDS)
  • burst operations - burst lengths 16/32/64/128 bytes
  • hybrid sleep and deep power-down modes
  • full and partial array refresh modes
  • small package
  • operating temperature ranges: industrial (I), automotive
 256 Mbit
(32Mx8)		 200 / 250 MHz 28 1.8
(VCC, VCCQ)		 -40 – +85 (I)

Automotive		 TFBGA-24
(6x8-mm)		 P P
W958D8NWS
  • HyperBus interface - low signal count, Double Data Rate (DDR)
  • 8-bit data bus
  • high speed read and write operations
  • differential clock
  • hardware Reset
  • Read-Write Data Strobe (RWDS)
  • burst operations - burst lengths 16/32/64/128 bytes
  • hybrid sleep and deep power-down modes
  • full and partial array refresh modes
  • small package
  • operating temperature ranges: industrial (I)
 256 Mbit
(32Mx8)		 200 MHz 35 1.8
(VCC, VCCQ)		 -40 – +85 (I) WLCSP-30 - P
W958D6NWS
  • HyperBus interface - low signal count, Double Data Rate (DDR)
  • 16-bit data bus
  • high speed read and write operations
  • differential clock
  • hardware Reset
  • Read-Write Data Strobe (RWDS)
  • burst operations - burst lengths 16/32/64/128 bytes
  • hybrid sleep and deep power-down modes
  • full and partial array refresh modes
  • small package
  • operating temperature ranges: industrial (I)
 256 Mbit
(16Mx16)		 200 MHz 35 1.8
(VCC, VCCQ)		 -40 – +85 (I) WLCSP-30 - P
W958D6NBK
  • HyperBus interface - low signal count, Double Data Rate (DDR)
  • 16-bit data bus
  • high speed read and write operations
  • differential clock
  • hardware Reset
  • Read-Write Data Strobe (RWDS)
  • burst operations - burst lengths 16/32/64/128 bytes
  • hybrid sleep and deep power-down modes
  • full and partial array refresh modes
  • small package
  • operating temperature ranges: industrial (I)
 256 Mbit
(16Mx16)		 200 / 250 MHz 28 1.8
(VCC, VCCQ)		 -40 – +85 (I) WFBGA-49 - P
W959D8NFY
  • HyperBus interface - low signal count, Double Data Rate (DDR)
  • 8-bit data bus
  • high speed read and write operations
  • differential clock
  • hardware Reset
  • Read-Write Data Strobe (RWDS)
  • burst operations - burst lengths 16/32/64/128 bytes
  • hybrid sleep and deep power-down modes
  • full and partial array refresh modes
  • small package
  • operating temperature ranges: industrial (I), automotive
 512 Mbit
(64Mx8)		 200 / 250 MHz 28 1.8
(VCC, VCCQ)		 -40 – +85 (I)

Automotive		 TFBGA-24
(6x8-mm)
DDP (Dual-Die-Package)		 P P
W959D6NFK
  • HyperBus interface - low signal count, Double Data Rate (DDR)
  • 16-bit data bus
  • high speed read and write operations
  • differential clock
  • hardware Reset
  • Read-Write Data Strobe (RWDS)
  • burst operations - burst lengths 16/32/64/128 bytes
  • hybrid sleep and deep power-down modes
  • full and partial array refresh modes
  • small package
  • operating temperature ranges: industrial (I)
 512 Mbit
(32Mx16)		 200 / 250 MHz 28 1.8
(VCC, VCCQ)		 -40 – +85 (I) WFBGA-49
DDP (Dual-Die-Package)		 - P




Low Power SDR SDRAM

Low Power SDR SDRAMs (Low Power Single Data Rate SDRAMs) are memories with 1.8/1.8 V power supply, designed with specific features to reduce power consumption.
All ICs are RoHS compliant.

* Status: P - mass production, S - samples, UD - under development, N - not recommended for new design.

Chip Description Density
(organization) 		Clock
  frequency   		Supply
  voltage  
[V] 		Operating
temperature
[°C] 		   Package    Status *
Automotive Commercial
& Industrial
W987D6HBG
  • synchronous burst mode interface
  • speed grades: -6, -75
  • CAS Latency: 2, 3
  • burst length: 1, 2, 4, 8 and full page
  • 4 banks
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended ?, industrial (I)
  • low power consumption
 128 Mbit
(8Mx16)		 133 MHz (-75)
166 MHz (-6)		 1.8/1.8
(VDD/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)		 VFBGA-54
(8x9-mm)		 - N
W987D2HBJ 128 Mbit
(4Mx32)		 133 MHz (-75)
166 MHz (-6)		 1.8/1.8
(VDD/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)		 VFBGA-90
(8x13-mm)		 - N
W988D6FBG
  • synchronous burst mode interface
  • speed grades: -6, -75
  • CAS Latency: 2, 3
  • burst length: 1, 2, 4, 8 and full page
  • 4 banks
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended ?, industrial (I)
  • low power consumption
 256 Mbit
(16Mx16)		 133 MHz (-75)
166 MHz (-6)		 1.8/1.8
(VDD/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)		 VFBGA-54
(8x9-mm)		 - N
W988D2FBJ 256 Mbit
(8Mx32)		 133 MHz (-75)
166 MHz (-6)		 1.8/1.8
(VDD/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)		 VFBGA-90
(8x13-mm)		 - N
W989D6KBG
  • synchronous burst mode interface
  • speed grade: -6, -75
  • CAS Latency: 2, 3
  • burst length: 1, 2, 4, 8 and full page
  • 4 banks
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E), industrial (I)
  • low power consumption
 512 Mbit
(32Mx16)		 133 MHz (-75)
166 MHz (-6)		 1.8/1.8
(VDD/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)		 VFBGA-54
(8x9-mm)		 - N
W989D2KBJ 512 Mbit
(16Mx32)		 133 MHz (-75)
166 MHz (-6)		 1.8/1.8
(VDD/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)		 VFBGA-90
(8x13-mm)		 - N
W989D6DBG
  • synchronous burst mode interface
  • speed grade: -6, -75
  • CAS Latency: 2, 3
  • burst length: 1, 2, 4, 8 and full page
  • 4 banks
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E), industrial (I)
  • low power consumption
 512 Mbit
(32Mx16)		 133 MHz (-75)
166 MHz (-6)		 1.8/1.8
(VDD/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)		 VFBGA-54
(8x9-mm)		 - P
W989D2DBJ 512 Mbit
(16Mx32)		 133 MHz (-75)
166 MHz (-6)		 1.8/1.8
(VDD/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)		 VFBGA-90
(8x13-mm)		 - P




Low Power DDR SDRAM

Low Power DDR SDRAMs (Low Power Double Data Rate SDRAMs) are memories with 1.8/1.8 V power supply, designed with specific features to reduce power consumption.
All ICs are RoHS compliant.

* Status: P - mass production, S - samples, UD - under development, N - not recommended for new design.

Chip Description Density
(organization) 		Clock
  frequency   		Supply
  voltage  
[V] 		Operating
temperature
[°C] 		   Package    Status *
Automotive Commercial
& Industrial
W947D6HBH
  • synchronous burst mode interface
  • speed grades: -5, -6
  • CAS Latency: 2, 3
  • burst length: 2, 4, 8, 16
  • 4 banks
  • differential clock inputs
  • data mask for write data
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E, G), industrial (I)
  • low power consumption
 128 Mbit
(8Mx16)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 Standard IDD6:
-25 – +85 (G)

Low IDD6:
-25 – +85 (E)
-40 – +85 (I)		 VFBGA-60
(8x9-mm)		 - N
W947D2HBJ 128 Mbit
(4Mx32)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 Standard IDD6:
-25 – +85 (G)

Low IDD6:
-25 – +85 (E)
-40 – +85 (I)		 VFBGA-90
(8x13-mm)		 - N
W948D6FBH
  • synchronous burst mode interface
  • speed grades: -5, -6
  • CAS Latency: 2, 3
  • burst length: 2, 4, 8, 16
  • 4 banks
  • differential clock inputs
  • data mask for write data
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E, G), industrial (I)
  • low power consumption
 256 Mbit
(16Mx16)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 Standard IDD6:
-25 – +85 (G)

Low IDD6:
-25 – +85 (E)
-40 – +85 (I)		 VFBGA-60
(8x9-mm)		 - N
W948D2FBJ
  • synchronous burst mode interface
  • speed grades: -5, -6
  • CAS Latency: 2, 3
  • burst length: 2, 4, 8, 16
  • 4 banks
  • differential clock inputs
  • data mask for write data
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E, G), industrial (I)
  • low power consumption
 256 Mbit
(8Mx32)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 Standard IDD6:
-25 – +85 (G)

Low IDD6:
-25 – +85 (E)
-40 – +85 (I)		 VFBGA-90
(8x13-mm)		 - N
W948D6KBH
  • synchronous burst mode interface
  • speed grades: -5, -6
  • CAS Latency: 2, 3
  • burst length: 2, 4, 8, 16
  • 4 banks
  • differential clock inputs
  • data mask for write data
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E, G), industrial (I)
  • low power consumption
 256 Mbit
(16Mx16)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 Standard IDD6:
-25 – +85 (G)

Low IDD6:
-25 – +85 (E)
-40 – +85 (I)		 VFBGA-60
(8x9-mm)		 - P
W948V6KBH
  • synchronous burst mode interface
  • speed grades: -5, -6
  • CAS Latency: 2, 3
  • burst length: 2, 4, 8, 16
  • 4 banks
  • differential clock inputs
  • data mask for write data
  • Self Refresh mode
  • Deep Self-Refresh (DSR) mode which can save 70% power compared with normal one
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E, G), industrial (I)
  • low power consumption
 256 Mbit
(16Mx16)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 Standard IDD6:
-25 – +85 (G)

Low IDD6:
-25 – +85 (E)
-40 – +85 (I)		 VFBGA-60
(8x9-mm)		 - N
W949D6KBH
  • synchronous burst mode interface
  • speed grades: -5, -6
  • CAS Latency: 2, 3
  • burst length: 2, 4, 8, 16
  • 4 banks
  • differential clock inputs
  • data mask for write data
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E), industrial (I)
  • low power consumption
 512 Mbit
(32Mx16)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)		 VFBGA-60
(8x9-mm)		 - N
W949D2KBJ 512 Mbit
(16Mx32)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)		 VFBGA-90
(8x13-mm)		 - N
W949D6DBH
  • synchronous burst mode interface
  • speed grades: -5, -6
  • CAS Latency: 2, 3
  • burst length: 2, 4, 8, 16
  • 4 banks
  • differential clock inputs
  • data mask for write data
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E), industrial (I), automotive
  • compliance with AEC-Q100 automotive specification
  • low power consumption
 512 Mbit
(32Mx16)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)

Automotive		 VFBGA-60
(8x9-mm)		 N P
W949D2DBJ 512 Mbit
(16Mx32)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)		 VFBGA-90
(8x13-mm)		 N P
W94AD6KBH
  • synchronous burst mode interface
  • speed grades: -5, -6
  • CAS Latency: 2, 3
  • burst length: 2, 4, 8, 16
  • 4 banks
  • differential clock inputs
  • data mask for write data
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E), industrial (I), automotive
  • compliance with AEC-Q100 automotive specification
  • low power consumption
 1 Gbit
(64Mx16)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)

Automotive		 VFBGA-60
(8x9-mm)		 N P
W94AD2KBJ 1 Gbit
(32Mx32)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)		 VFBGA-90
(8x13-mm)		 N P




Low Power DDR2 SDRAM

Low Power DDR2 SDRAMs (Low Power Double Data Rate SDRAMs 2nd generation) are memories with 1.8/1.2 V power supply, designed with specific features to reduce power consumption.
All ICs are RoHS compliant.

* Status: P - mass production, S - samples, UD - under development, N - not recommended for new design.

Chip Description Density
(organization) 		Clock
  frequency   		Supply
  voltage  
[V] 		Operating
temperature
[°C] 		   Package    Status *
Automotive Commercial
& Industrial
W978H6KBV
  • synchronous burst mode interface
  • burst length: 4, 8, 16
  • 4 banks
  • differential clock inputs
  • data mask for write data
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E), industrial (I), automotive
  • compliance with AEC-Q100 automotive specification
  • low power consumption
 256 Mbit
(16Mx16)		 400 MHz
533 MHz		 1.8 (VDD1)

1.2
(VDD2/VDDCA/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)

Automotive		 VFBGA-134
(10x11.5-mm)		 N N
W978H2KBV 256 Mbit
(8Mx32)		 400 MHz
533 MHz		 1.8 (VDD1)

1.2
(VDD2/VDDCA/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)

Automotive		 VFBGA-134
(10x11.5-mm)		 N N
W979H6KBV
  • synchronous burst mode interface
  • burst length: 4, 8, 16
  • 4 banks
  • differential clock inputs
  • data mask for write data
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E), industrial (I), automotive
  • compliance with AEC-Q100 automotive specification
  • low power consumption
 512 Mbit
(32Mx16)		 400 MHz
533 MHz		 1.8 (VDD1)

1.2
(VDD2/VDDCA/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)

Automotive		 VFBGA-134
(10x11.5-mm)		 P N
W979H2KBV 512 Mbit
(16Mx32)		 400 MHz
533 MHz		 1.8 (VDD1)

1.2
(VDD2/VDDCA/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)

Automotive		 VFBGA-134
(10x11.5-mm)		 P N
W97AH6KBV
  • synchronous burst mode interface
  • burst length: 4, 8, 16
  • 8 banks
  • differential clock inputs
  • data mask for write data
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E), industrial (I), automotive
  • compliance with AEC-Q100 automotive specification
  • low power consumption
 1 Gbit
(64Mx16)		 400 MHz
533 MHz		 1.8 (VDD1)

1.2
(VDD2/VDDCA/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)

Automotive		 VFBGA-134
(10x11.5-mm)		 N N
W97AH2KBV 1 Gbit
(32Mx32)		 400 MHz
533 MHz		 1.8 (VDD1)

1.2
(VDD2/VDDCA/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)

Automotive		 VFBGA-134
(10x11.5-mm)		 N N
W97AH6NBV 1 Gbit
(64Mx16)		 400 MHz
533 MHz		 1.8 (VDD1)

1.2
(VDD2/VDDCA/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)

Automotive		 VFBGA-134
(10x11.5-mm)		 P P
W97AH2NBV 1 Gbit
(32Mx32)		 400 MHz
533 MHz		 1.8 (VDD1)

1.2
(VDD2/VDDCA/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)

Automotive		 VFBGA-134
(10x11.5-mm)		 P P
W97BH6MBV
  • synchronous burst mode interface
  • burst length: 4, 8, 16
  • 8 banks
  • differential clock inputs
  • data mask for write data
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E), industrial (I), automotive
  • compliance with AEC-Q100 automotive specification
  • low power consumption
 2 Gbit
(128Mx16)		 400 MHz
533 MHz		 1.8 (VDD1)

1.2
(VDD2/VDDCA/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)

Automotive		 VFBGA-134
(10x11.5-mm)		 N P
W97BH2MBV 2 Gbit
(64Mx32)		 400 MHz
533 MHz		 1.8 (VDD1)

1.2
(VDD2/VDDCA/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)

Automotive		 VFBGA-134
(10x11.5-mm)		 N P




Low Power DDR3 SDRAM

Low Power DDR3 SDRAMs (Low Power Double Data Rate SDRAMs 3rd generation) are memories with 1.8/1.2 V power supply, designed with specific features to reduce power consumption.
All ICs are RoHS compliant.

* Status: P - mass production, S - samples, UD - under development, N - not recommended for new design.

Chip Description Density
(organization) 		Clock
  frequency   		Supply
  voltage  
[V] 		Operating
temperature
[°C] 		   Package    Status *
Automotive Commercial
& Industrial
W63AH6NBV
  • synchronous burst mode interface
  • 8 banks
  • differential clock inputs
  • data mask for write data
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E), industrial (I)
  • low power consumption
 1 Gbit
(64Mx16)		 800 / 933 / 1066 MHz 1.8 (VDD1)

1.2
(VDD2/VDDCA/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)		 BGA-178 - P
W63AH2NBV 1 Gbit
(32Mx32)		 800 / 933 / 1066 MHz 1.8 (VDD1)

1.2
(VDD2/VDDCA/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)		 BGA-178 - P




Low Power DDR4/4X SDRAM

Low Power DDR4/4X SDRAMs (Low Power Double Data Rate SDRAMs 4th generation) are memories with 1.8/1.1/1.1 V (DDR4) or 1.8/1.1/0.6 V (DDR4X) power supply, designed with specific features to reduce power consumption.
All ICs are RoHS compliant.

* Status: P - mass production, S - samples, UD - under development, N - not recommended for new design.

Chip Description Density
(organization) 		Clock
  frequency   		Supply
  voltage  
[V] 		Operating
temperature
[°C] 		   Package    Status *
Automotive Commercial
& Industrial
W66AP6NBU
  • Single-Die-Package (SDP), single channel memory
  • synchronous burst mode interface
  • burst length: 16/32 bytes
  • 8 banks
  • differential clock inputs
  • refresh modes: Auto Refresh (per bank), partial array Self Refresh
  • Power-down mode
  • operating temperature range: industrial plus (J)
 1 Gbit
(64Mx16x1 channel)		 1600 / 1866 / 2133 MHz 1.8 / 1.1 / 1.1 -40 – +105 (J) WFBGA-200 - P
W66AQ6NBU 1 Gbit
(64Mx16x1 channel)		 1600 / 1866 / 2133 MHz 1.8 / 1.1 / 0.6 -40 – +105 (J) WFBGA-200 - P
W66AP6NBH
  • Single-Die-Package (SDP), single channel memory
  • synchronous burst mode interface
  • burst length: 16/32 bytes
  • 8 banks
  • differential clock inputs
  • refresh modes: Auto Refresh (per bank), partial array Self Refresh
  • Power-down mode
  • operating temperature range: industrial plus (J)
 1 Gbit
(64Mx16x1 channel)		 1600 / 1866 / 2133 MHz 1.8 / 1.1 / 1.1 -40 – +105 (J) VFBGA-100 - P
W66AQ6NBH 1 Gbit
(64Mx16x1 channel)		 1600 / 1866 / 2133 MHz 1.8 / 1.1 / 0.6 -40 – +105 (J) VFBGA-100 - P
W66AP6NBQ
  • Single-Die-Package (SDP), single channel memory
  • synchronous burst mode interface
  • burst length: 16/32 bytes
  • 8 banks
  • differential clock inputs
  • refresh modes: Auto Refresh (per bank), partial array Self Refresh
  • Power-down mode
  • operating temperature range: industrial plus (J)
 1 Gbit
(64Mx16x1 channel)		 1600 / 1866 / 2133 MHz 1.8 / 1.1 / 1.1 -40 – +105 (J) TFBGA-200 - P
W66AQ6NBQ 1 Gbit
(64Mx16x1 channel)		 1600 / 1866 / 2133 MHz 1.8 / 1.1 / 0.6 -40 – +105 (J) TFBGA-200 - P
W66BP6NBU
  • Single-Die-Package (SDP), single channel memory
  • synchronous burst mode interface
  • burst length: 16/32 bytes
  • 8 banks
  • differential clock inputs
  • refresh modes: Auto Refresh (per bank), partial array Self Refresh
  • Power-down mode
  • operating temperature range: industrial plus (J), automotive
 2 Gbit
(128Mx16x1 channel)		 1600 / 1866 / 2133 MHz 1.8 / 1.1 / 1.1 -40 – +105 (I)

Automotive		 WFBGA-200 P P
W66BQ6NBU 2 Gbit
(128Mx16x1 channel)		 1600 / 1866 / 2133 MHz 1.8 / 1.1 / 0.6 -40 – +105 (I)

Automotive		 WFBGA-200 P P
W66BP6NBH
  • Single-Die-Package (SDP), single channel memory
  • synchronous burst mode interface
  • burst length: 16/32 bytes
  • 8 banks
  • differential clock inputs
  • refresh modes: Auto Refresh (per bank), partial array Self Refresh
  • Power-down mode
  • operating temperature range: industrial plus (J)
 2 Gbit
(128Mx16x1 channel)		 1600 / 1866 / 2133 MHz 1.8 / 1.1 / 1.1 -40 – +105 (I) VFBGA-100 - P
W66BQ6NBH 2 Gbit
(128Mx16x1 channel)		 1600 / 1866 / 2133 MHz 1.8 / 1.1 / 0.6 -40 – +105 (I) VFBGA-100 - P
W66BP6NBQ
  • Single-Die-Package (SDP), single channel memory
  • synchronous burst mode interface
  • burst length: 16/32 bytes
  • 8 banks
  • differential clock inputs
  • refresh modes: Auto Refresh (per bank), partial array Self Refresh
  • Power-down mode
  • operating temperature range: industrial plus (J)
 2 Gbit
(128Mx16x1 channel)		 1600 / 1866 / 2133 MHz 1.8 / 1.1 / 1.1 -40 – +105 (I) TFBGA-200 - P
W66BQ6NBQ 2 Gbit
(128Mx16x1 channel)		 1600 / 1866 / 2133 MHz 1.8 / 1.1 / 0.6 -40 – +105 (I) TFBGA-200 - P
W66BQ2NQU
  • Dual-Die-Package (DDP), dual channel memory
  • synchronous burst mode interface
  • burst length: 16/32 bytes
  • 8 banks
  • differential clock inputs
  • refresh modes: Auto Refresh (per bank), partial array Self Refresh
  • Power-down mode
  • operating temperature range: industrial (I), industrial plus (J)
 2 Gbit
(64Mx16x1 channel)		 1600 / 1866 / 2133 MHz 1.8 / 1.1 / 0.6 -40 – +95 (I)
-40 – +105 (I)		 WFBGA-200 - P
W66BP2NQU 2 Gbit
(64Mx16x1 channel)		 1600 / 1866 / 2133 MHz 1.8 / 1.1 / 1.1 -40 – +105 (I) WFBGA-200 - P
W66BQ2NQQ
  • Dual-Die-Package (DDP), dual channel memory
  • synchronous burst mode interface
  • burst length: 16/32 bytes
  • 8 banks
  • differential clock inputs
  • refresh modes: Auto Refresh (per bank), partial array Self Refresh
  • Power-down mode
  • operating temperature range: industrial (I), industrial plus (J)
 2 Gbit
(64Mx16x1 channel)		 1600 / 1866 / 2133 MHz 1.8 / 1.1 / 0.6 -40 – +95 (I)
-40 – +105 (I)		 TFBGA-200 - P
W66BP2NQQ 2 Gbit
(64Mx16x1 channel)		 1600 / 1866 / 2133 MHz 1.8 / 1.1 / 1.1 -40 – +105 (I) TFBGA-200 - P
W66CQ2NQU
  • Dual-Die-Package (DDP), dual channel memory
  • synchronous burst mode interface
  • burst length: 16/32 bytes
  • 8 banks
  • refresh modes: Auto Refresh (per bank), partial array Self Refresh
  • Power-down mode
  • operating temperature range: industrial plus (J), automotive
 4 Gbit
(128Mx16x2 channels)		 1600 / 1866 / 2133 MHz 1.8 / 1.1 / 0.6 -40 – +105 (J)

Automotive		 WFBGA-200 P P
W66CP2NQU 4 Gbit
(128Mx16x2 channels)		 1600 / 1866 / 2133 MHz 1.8 / 1.1 / 1.1 -40 – +105 (J)

Automotive		 WFBGA-200 P P
W66CQ2NQQ
  • Dual-Die-Package (DDP), dual channel memory
  • synchronous burst mode interface
  • burst length: 16/32 bytes
  • 8 banks
  • differential clock inputs
  • refresh modes: Auto Refresh (per bank), partial array Self Refresh
  • Power-down mode
  • operating temperature range: industrial (I), industrial plus (J)
 4 Gbit
(128Mx16x2 channel)		 1600 / 1866 / 2133 MHz 1.8 / 1.1 / 0.6 -40 – +95 (I)
-40 – +105 (I)		 TFBGA-200 - P
W66CP2NQQ 4 Gbit
(128Mx16x2 channel)		 1600 / 1866 / 2133 MHz 1.8 / 1.1 / 1.1 -40 – +105 (I) TFBGA-200 - P




PDW MARTHEL ul. Sosnowa 24-5 Bielany Wrocławskie 55-040 Kobierzyce
tel. (71) 311 07 11 fax: (71) 311 07 13 marthelinfo@marthel.pl
Polityka jakości