Flash

NAND Based MCP

Multi-Chip Package (MCP) memory product family consisting of a parallel NAND Flash memory and a mobile Low Power SDRAM memory in one package to provide the most space effective solution.

* Status: P - mass production, S - samples, UD - under development, N - not recommended for new design, NA - not available.

Chip Description Density
(organization) 		Supply
  voltage  
[V]		 Operating
temperature
[°C]		    Package    Status *
Automotive Commercial
& Industrial
W71NW10GE3FW Two parallel memories in one package: NAND Flash & LPDDR2 SDRAM (Mobile):

NAND Flash:
  • Single-Level Cell (SLC) technology
  • bus width - 8 bits
  • block organization, total 1024 erasable blocks
  • block size: 64 pages
  • page size: 2048 B + 64 B
  • clock frequency: 29 MHz
  • data protection in OTP area
  • operating temperature range: industrial (I)
LPDDR2:
  • synchronous burst mode interface
  • bus width - 32 bits
  • double data rate for data output
  • clock frequency: up to 400 MHz (data rate up to 800 Mbit/s/pin)
  • 4 banks
  • Self Refresh mode
  • Deep Power-down mode
  • operating temperature range: industrial (I)
 NAND Flash: 1 Gbit
(128Mx8)

LPDDR2: 512 Mbit
(16Mx32)		 NAND Flash: 1.7 - 1.95

LPDDR2:
VDD1 = 1.7 - 1.95
VDD2/VDDCA/VDDQ = 1.14 - 1.30		 -40 – +85 (I) BGA-162
(8x10.5x1 mm)		 - N
W71NW10HE3FW Two parallel memories in one package: NAND Flash & LPDDR2 SDRAM (Mobile):

NAND Flash:
  • Single-Level Cell (SLC) technology
  • bus width - 8 bits
  • block organization, total 1024 erasable blocks
  • block size: 64 pages
  • page size: 2048 B + 64 B
  • clock frequency: 29 MHz
  • data protection in OTP area
  • operating temperature range: industrial (I)
LPDDR2:
  • synchronous burst mode interface
  • bus width - 32 bits
  • double data rate for data output
  • clock frequency: up to 400 MHz (data rate up to 800 Mbit/s/pin)
  • 4 banks
  • Self Refresh mode
  • Deep Power-down mode
  • operating temperature range: industrial (I)
 NAND Flash: 1 Gbit
(128Mx8)

LPDDR2: 512 Mbit
(16Mx32)		 NAND Flash: 1.7 - 1.95

LPDDR2:
VDD1 = 1.7 - 1.95
VDD2/VDDCA/VDDQ = 1.14 - 1.30		 -40 – +85 (I) BGA-162
(8x10.5x1 mm)		 - P
W71NW10HM3FW Two parallel memories in one package: NAND Flash & LPDDR2 SDRAM (Mobile):

NAND Flash:
  • Single-Level Cell (SLC) technology
  • bus width - 8 bits
  • block organization, total 1024 erasable blocks
  • block size: 64 pages
  • page size: 2048 B + 64 B
  • clock frequency: 29 MHz
  • data protection in OTP area
  • operating temperature range: industrial (I)
LPDDR2:
  • synchronous burst mode interface
  • bus width - 32 bits
  • double data rate for data output
  • clock frequency: up to 400 MHz (data rate up to 800 Mbit/s/pin)
  • 4 banks
  • Self Refresh mode
  • Deep Power-down mode
  • operating temperature range: industrial (I)
 NAND Flash: 1 Gbit
(128Mx8)

LPDDR2: 1 Gbit
(32Mx32)		 NAND Flash: 1.7 - 1.95

LPDDR2:
VDD1 = 1.7 - 1.95
VDD2/VDDCA/VDDQ = 1.14 - 1.30		 -40 – +85 (I) BGA-162
(8x10.5x1 mm)		 - P
W71NW20GF3FW Two parallel memories in one package: NAND Flash & LPDDR2 SDRAM (Mobile):

NAND Flash:
  • Single-Level Cell (SLC) technology
  • bus width - 8 bits
  • block organization, total 1024 erasable blocks
  • block size: 64 pages
  • page size: 2048 B + 64 B
  • clock frequency: 40 MHz
  • data protection in OTP area
  • operating temperature range: industrial (I)
LPDDR2:
  • synchronous burst mode interface
  • bus width - 32 bits
  • double data rate for data output
  • clock frequency: up to 400 MHz (data rate up to 800 Mbit/s/pin)
  • 4 banks
  • Self Refresh mode
  • Deep Power-down mode
  • operating temperature range: industrial (I)
 NAND Flash: 2 Gbit
(256Mx8)

LPDDR2: 1 Gbit
(32Mx32)		 NAND Flash: 1.7 - 1.95

LPDDR2:
VDD1 = 1.7 - 1.95
VDD2/VDDCA/VDDQ = 1.14 - 1.30		 -40 – +85 (I) BGA-162
(8x10.5x1 mm)		 - N
W71NW20KM3FW Two parallel memories in one package: NAND Flash & LPDDR2 SDRAM (Mobile):

NAND Flash:
  • Single-Level Cell (SLC) technology
  • bus width - 8 bits
  • block organization, total 2048 erasable blocks
  • block size: 64 pages
  • page size: 2048 B + 128 B
  • clock frequency: 40 MHz
  • data protection in OTP area
  • operating temperature range: industrial (I)
LPDDR2:
  • synchronous burst mode interface
  • bus width - 32 bits
  • double data rate for data output
  • clock frequency: up to 400 MHz (data rate up to 800 Mbit/s/pin)
  • 4 banks
  • Self Refresh mode
  • Deep Power-down mode
  • operating temperature range: industrial (I)
 NAND Flash: 2 Gbit
(256Mx8)

LPDDR2: 1 Gbit
(32Mx32)		 NAND Flash: 1.7 - 1.95

LPDDR2:
VDD1 = 1.7 - 1.95
VDD2/VDDCA/VDDQ = 1.14 - 1.30		 -40 – +85 (I) BGA-162
(8x10.5x1 mm)		 - N
W71NW20KJ3FW Two parallel memories in one package: NAND Flash & LPDDR2 SDRAM (Mobile):

NAND Flash:
  • Single-Level Cell (SLC) technology
  • bus width - 8 bits
  • block organization, total 2048 erasable blocks
  • block size: 64 pages
  • page size: 2048 B + 128 B
  • clock frequency: 40 MHz
  • data protection in OTP area
  • operating temperature range: industrial (I)
LPDDR2:
  • synchronous burst mode interface
  • bus width - 32 bits
  • double data rate for data output
  • clock frequency: up to 400 MHz (data rate up to 800 Mbit/s/pin)
  • 4 banks
  • Self Refresh mode
  • Deep Power-down mode
  • operating temperature range: industrial (I)
 NAND Flash: 2 Gbit
(256Mx8)

LPDDR2: 2 Gbit
(64Mx32)		 NAND Flash: 1.7 - 1.95

LPDDR2:
VDD1 = 1.7 - 1.95
VDD2/VDDCA/VDDQ = 1.14 - 1.30		 -40 – +85 (I) BGA-162
(8x10.5x1 mm)		 - N
W71NW42KJ3FW Two parallel memories in one package: NAND Flash & LPDDR2 SDRAM (Mobile):

NAND Flash:
  • Single-Level Cell (SLC) technology
  • bus width - 8 bits
  • block organization, total 2048 erasable blocks
  • block size: 64 pages
  • page size: 4096 B + 256 B
  • clock frequency: 40 MHz
  • data protection in OTP area
  • operating temperature range: industrial (I)
LPDDR2:
  • synchronous burst mode interface
  • bus width - 32 bits
  • double data rate for data output
  • clock frequency: up to 400 MHz (data rate up to 800 Mbit/s/pin)
  • 4 banks
  • Self Refresh mode
  • Deep Power-down mode
  • operating temperature range: industrial (I)
 NAND Flash: 4 Gbit
(512Mx8)

LPDDR2: 2 Gbit
(64Mx32)		 NAND Flash: 1.7 - 1.95

LPDDR2:
VDD1 = 1.7 - 1.95
VDD2/VDDCA/VDDQ = 1.14 - 1.30		 -40 – +85 (I) BGA-162
(8x10.5x1.8 mm)		 - N