Mobile DRAM

Low Power DDR SDRAM

Low Power DDR SDRAMs (Low Power Double Data Rate SDRAMs) are memories with 1.8/1.8 V power supply, designed with specific features to reduce power consumption.
All ICs are RoHS compliant.

* Status: P - mass production, S - samples, UD - under development, N - not recommended for new design.

Chip Description Density
(organization)		 Clock
  frequency  		 Supply
  voltage  
[V]		 Operating
temperature
[°C]		    Package    Status *
Automotive Commercial
& Industrial
W947D6HBH
 (1161 kB)
  • synchronous burst mode interface
  • speed grades: -5, -6
  • CAS Latency: 2, 3
  • burst length: 2, 4, 8, 16
  • 4 banks
  • differential clock inputs
  • data mask for write data
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E, G), industrial (I)
  • low power consumption
 128 Mbit
(8Mx16)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 Standard IDD6:
-25 – +85 (G)

Low IDD6:
-25 – +85 (E)
-40 – +85 (I)		 VFBGA-60
(8x9 mm)		 - N
W947D2HBJ
 (1161 kB) 		128 Mbit
(4Mx32)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 Standard IDD6:
-25 – +85 (G)

Low IDD6:
-25 – +85 (E)
-40 – +85 (I)		 VFBGA-90
(8x13 mm)		 - N
W948D6FBH
 (963 kB)
  • synchronous burst mode interface
  • speed grades: -5, -6
  • CAS Latency: 2, 3
  • burst length: 2, 4, 8, 16
  • 4 banks
  • differential clock inputs
  • data mask for write data
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E, G), industrial (I)
  • low power consumption
 256 Mbit
(16Mx16)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 Standard IDD6:
-25 – +85 (G)

Low IDD6:
-25 – +85 (E)
-40 – +85 (I)		 VFBGA-60
(8x9 mm)		 - N
W948D2FBJ
 (963 kB)
  • synchronous burst mode interface
  • speed grades: -5, -6
  • CAS Latency: 2, 3
  • burst length: 2, 4, 8, 16
  • 4 banks
  • differential clock inputs
  • data mask for write data
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E, G), industrial (I)
  • low power consumption
 256 Mbit
(8Mx32)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 Standard IDD6:
-25 – +85 (G)

Low IDD6:
-25 – +85 (E)
-40 – +85 (I)		 VFBGA-90
(8x13 mm)		 - N
W948D6KBH
 (1057 kB)
  • synchronous burst mode interface
  • speed grades: -5, -6
  • CAS Latency: 2, 3
  • burst length: 2, 4, 8, 16
  • 4 banks
  • differential clock inputs
  • data mask for write data
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E, G), industrial (I)
  • low power consumption
 256 Mbit
(16Mx16)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 Standard IDD6:
-25 – +85 (G)

Low IDD6:
-25 – +85 (E)
-40 – +85 (I)		 VFBGA-60
(8x9 mm)		 - P
W948V6KBH
 (1089 kB)
  • synchronous burst mode interface
  • speed grades: -5, -6
  • CAS Latency: 2, 3
  • burst length: 2, 4, 8, 16
  • 4 banks
  • differential clock inputs
  • data mask for write data
  • Self Refresh mode
  • Deep Self-Refresh (DSR) mode which can save 70% power compared with normal one
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E, G), industrial (I)
  • low power consumption
 256 Mbit
(16Mx16)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 Standard IDD6:
-25 – +85 (G)

Low IDD6:
-25 – +85 (E)
-40 – +85 (I)		 VFBGA-60
(8x9 mm)		 - N
W949D6KBH
 (936 kB)
  • synchronous burst mode interface
  • speed grades: -5, -6
  • CAS Latency: 2, 3
  • burst length: 2, 4, 8, 16
  • 4 banks
  • differential clock inputs
  • data mask for write data
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E), industrial (I)
  • low power consumption
 512 Mbit
(32Mx16)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)		 VFBGA-60
(8x9 mm)		 - N
W949D2KBJ
 (936 kB) 		512 Mbit
(16Mx32)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)		 VFBGA-90
(8x13 mm)		 - N
W949D6DBH
 (1071 kB)
  • synchronous burst mode interface
  • speed grades: -5, -6
  • CAS Latency: 2, 3
  • burst length: 2, 4, 8, 16
  • 4 banks
  • differential clock inputs
  • data mask for write data
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E), industrial (I), automotive
  • compliance with AEC-Q100 automotive specification
  • low power consumption
 512 Mbit
(32Mx16)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)

Automotive		 VFBGA-60
(8x9 mm)		 N P
W949D2DBJ
 (1071 kB) 		512 Mbit
(16Mx32)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)		 VFBGA-90
(8x13 mm)		 N P
W94AD6KBH
 (1142 kB)
  • synchronous burst mode interface
  • speed grades: -5, -6
  • CAS Latency: 2, 3
  • burst length: 2, 4, 8, 16
  • 4 banks
  • differential clock inputs
  • data mask for write data
  • Self Refresh mode
  • Power-down and Deep Power-down modes
  • operating temperature range: extended (E), industrial (I), automotive
  • compliance with AEC-Q100 automotive specification
  • low power consumption
 1 Gbit
(64Mx16)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)

Automotive		 VFBGA-60
(8x9 mm)		 N P
W94AD2KBJ
 (1142 kB) 		1 Gbit
(32Mx32)		 166 MHz (-6)
200 MHz (-5)		 1.8/1.8
(VDD/VDDQ)		 -25 – +85 (E)
-40 – +85 (I)		 VFBGA-90
(8x13 mm)		 N P