Mobile DRAM

Pseudo SRAM

Pseudo SRAMs (PSRAMs) are memories consisting of a DRAM macro core with a traditional asynchronous SRAM interface. They feature fast access time and low power consumption. Comparing to traditional CMOS SRAM have a higher density, higher speed, smaller die size and DRAM compatible process.

* Status: P - mass production, S - samples, UD - under development, N - not recommended for new design.

Chip Description Density
(organization)		 Clock
  frequency  		 Access time
[ns]		 Supply
  voltage  
[V]		 Operating
temperature
[°C]		    Package    Status *
Automotive Commercial
& Industrial
W956D6KBK
 (1710 kB) 		CellularRAM-ADM:
  • Address/ Data Multiplexed
  • supports asynchronous and burst operations
  • 4/8/16/32-word or continuous burst Read/Write mode
  • deep power-down mode
  • operating temperature range: industrial (I)
  • low power consumption
 64 Mbit
(4Mx16)		 133 MHz 70 1.8/1.8
(VDD/VDDQ)		 -40 – +85 (I) WFBGA-49
(4x4 mm)		 - P
W958D6DBC
 (1159 kB) 		CellularRAM-ADM:
  • Address/ Data Multiplexed
  • supports asynchronous and burst operations
  • 4/8/16/32-word or continuous burst Read/Write mode
  • deep power-down mode
  • operating temperature range: industrial (I)
  • low power consumption
 256 Mbit
(16Mx16)		 133 MHz 70 1.8/1.8
(VDD/VDDQ)		 -40 – +85 (I) VFBGA-54
(6x8 mm)		 - N
W968D6DAG
 (1678 kB) 		CellularRAM:
  • supports asynchronous, page and burst operations
  • 4/8/16/32-word or continuous burst Read/Write mode
  • deep power-down mode
  • operating temperature range: industrial (I)
  • low power consumption
 256 Mbit
(16Mx16)		 133 MHz 70 1.8/1.8
(VDD/VDDQ)		 -40 – +85 (I) VFBGA-54
(6x8 mm)		 - N