About Winbond

Winbond Electronics Corporation was founded in 1987 in Hsinchu Science Park, Taiwan.

Until now the Company was one of the bigest manufacturer of LSI integrated circuits (microcontrolles, memories, telecommunications ICs, computer logic ICs and sound ICs) in the world. In July 2008 was created the new company, Nuvoton Technology Corporation , as a wholly-owned subsidiary of Winbond which took over the whole Winbond’s products lines of Computer Logic and Consumer Logic ICs.
Today Winbond focuses only on the Memory Products design and manufacturing with four main products groups: Mobile RAM, DRAM, Graphics DRAM and Flash Memory ICs.

Winbond is IECQ, ISO 9001, ISO 14001 and QS 9000 certified. Many of its products meet the AEC-Q100 specification and are qualified for Automotive grade.
Winbond has set up subsidiaries in the USA, Japan, and Hong Kong.

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Winbond products:

  • Mobile DRAM
    • Pseudo SRAM (PSRAM) – a kind of memories which consist of a DRAM macro core with a traditional asynchronous SRAM interface. It is a line of 1.8 V products which offer 64 – 256 Mb densities, can work with up to 133 MHz clock frequencies and feature fast access time and low power consumption. Comparing to traditional CMOS SRAMs they have a higher density, higher speed, smaller die size and DRAM compatible process.
    • HyperRAM – an improved version of the Pseudo SRAM memories, consisting of a DRAM macro core with a traditional asynchronous SRAM interface, characterized by a higher speed and smaller form factor size. It is a line of 1.8 or 3 V products which offer 32 – 512 Mb densities, can work with up to 250 MHz clock frequencies and feature fast access time and low power consumption.
    • Low Power SDR SDRAM (LPSDR) – a kind of SDRAMs that transfer data on only one edge of the clock signal (SDR architecture), designed with specific features to reduce power consumption. It is a line of 1.8 V products with 128 – 512 Mb densities which can work with up to 166 MHz clock frequencies.
    • Low Power DDR SDRAM (LPDDR) – a kind of SDRAMs that transfer data on both edges of the clock signal (DDR architecture) and achieve twice the data speed of SDR SDRAMs, designed with specific features to reduce power consumption. It is a line of 1.8 V products which offer 128 Mb – 1 Gb densities and can work with up to 200 MHz clock frequencies.
    • Low Power DDR2 SDRAM (LPDDR2) – DDR SDRAMs generation 2 that transfer data on both edges of the clock signal, designed with specific features to reduce power consumption. They achieve greater data speed than LPDDRs by higher effective clock rate. It is a line of 1.8/1.2 V products which offer 256 Mb – 2 Gb densities and can work with up to 533 MHz clock frequencies.
    • Low Power DDR3 SDRAM (LPDDR3) – DDR SDRAMs generation 3 based on the JESD209-3 standard that transfer data on both edges of the clock signal, designed with specific features to reduce power consumption. It is a line of 1.8/1.2 V products offering 1 Gb density. They can work with up to 1066 MHz clock frequencies and achieve a very high transfer rate up to 2133 Mb/sec/pin.
    • Low Power DDR4/4X SDRAM (LPDDR4) – DDR SDRAMs generation 4 based on the JESD209-4 standard that transfer data on both edges of the clock signal, designed with specific features to reduce power consumption. It is a line of 1.8/1.1/1.1 V (DDR4) or 1.8/1.1/0.6 V (DDR4X) products offering 1 – 4 Gb densities. They can work with up to 1866 MHz clock frequencies and achieve a very high transfer rate up to 3732 Mb/sec/pin.
  • DRAM
    • SDRAM – synchronous DRAMs that transfer data on only one clock transition (SDR – Single Data Rate), designed to process data at the same clock speed as the CPU. It is a line of 3.0 – 3.6 V or 2.7 – 3.6 V products which offer 16 – 256 Mb densities and can work with 133 – 200 MHz clock frequencies.
    • DDR SDRAM – Double-Data-Rate Synchronous DRAMs that achieve twice the data speed of SDR SDRAMs by transferring data on both edges of the clock signal. It is a line of 2.3 – 2.7 V or 2.4 – 2.7 V products which offer 64 – 256 Mb densities. They can work with 166 – 250 MHz clock frequencies and are compliant to DDR-333, DDR-400 and DDR-500 specifications.
    • DDR2 SDRAM – Double-Data-Rate Synchronous DRAMs generation 2 which achieve greater data speed than DDR SDRAMs by higher effective clock rate. It is a line of 1.8 V products which offer 128 Mb – 2 Gb densities and are compliant to DDR2-667, DDR2-800 and DDR2-1066 specifications.
    • DDR3 SDRAM – Double-Data-Rate Synchronous DRAMs generation 3 which achieve greater data speed than DDR2 SDRAMs by higher effective clock rate. It is a line of 1.5 V ±0.075 V or 1.283 – 1.45 V products which offer 1 – 8 Gb densities and are compliant to DDR3-1333, DDR3-1600, DDR3-1866 and DDR3-2133 specifications.
  • Flash
    • Serial NOR Flash – high speed non-volatile NOR type memories using a Serial Peripheral Interface (SPI) with a standard/dual (X series) or standard/dual/quad output (Q series) and Quad Peripheral Interface (QPI). They have densities of 512 Kb – 2 Gb and a power supply of 2.7 (2.3) – 3.6 V or 1.65 – 1.95 V. They can operate at a clock frequency up to 133 MHz and achieve maximum transfer rate of 266 Mbps in case of X series and 532 Mbps in case of Q series. They feature limited space, pins and power consumption, up to 100 K program/erase cycles and 20-year data retention.
    • 1.2V Serial NOR Flash – high speed non-volatile NOR type memories using a Serial Peripheral Interface (SPI) with a standard/dual/quad output. These are low-power devices with a power supply of 1.14 – 1.6 V and densities of 8 – 512 Mb. They can operate at a clock frequency up to 104 MHz and achieve maximum transfer rate of 416 Mbps. They feature limited space and pins, up to 100 K program/erase cycles and 20-year data retention.
    • Serial QspiNAND Flash – high speed non-volatile NAND type memories using a Serial Peripheral Interface (SPI) with a standard/dual/quad output and Quad Peripheral Interface (QPI). These products are an extension of the Serial NOR Flash memories at higher densities: 512 Mb – 4 Gb. They have 2.7 – 3.6 V or 1.70 – 1.95 V power supply and can operate at a clock frequency up to 166 MHz reaching the maximum transfer rate up to 532 Mbps. They are produced in 8-pin, 16-pin or 24-pin packages and feature limited power consumption, up to 100 K program/erase cycles and 10-year data retention.
    • OctalNAND Flash – high speed non-volatile NAND type memories which use an Octal Serial Peripheral Interface (SPI). They offer 1 – 4 Gb densities, and have 1.70 – 1.95 V power supply voltage. At a clock frequency of 120 MHz in DTR mode, they achieve data transfer rate up to 240 MB/s. They are produced in 24-pin packages.
    • Parallel SLC NAND Flash – high speed non-volatile SLC NAND type memories with parallel address/data bus. They have densities of 1 – 8 Gb with a bus width of 8 or 16 bits. They have a power supply of 2.7 – 3.6 V or 1.7 – 1.95 V and can operate at a clock frequency up to 40 MHz. They feature up to 100 K program/erase cycles, low power consumption and 10-year data retention.
    • NAND Based MCP – Multi-Chip Package (MCP) memory product family consisting of a parallel SLC NAND Flash memory and a mobile Low Power DDR2 SDRAM memory in one package to provide the most space effective solutions that save areas on PCBs. They contain Flash 1 – 4 Gb and DRAM 512 Mb – 2 Gb memories in various configurations and are powered by a voltages of 1.7 – 1.95 V and 1.14 – 1.30 V. They are produced in BGA packages.
    • SpiStack Flash – Serial Flash memory product family consisting of a multiple SpiFlash dies which can be stacked with various combinations of NOR and NAND dies in one small package to provide the most space effective solutions for code and data storage. They use Serial NOR Flash memories with the density of 16 – 128 Mb and 1 Gb Serial NAND Flash memory powered by a voltages of 2.7 – 3.6 V or 1.7 – 1.95 V. They are produced in WSON-8 and BGA-24 packages.
    • Authentication Flash – the product family that can work with a multitude of microprocessors or SoCs to raise the level of security in many systems with true end-to-end security. These are multi-chip packaged devices with Winbond’s Serial Flash memories using a Serial Peripheral Interface (SPI). In addition to preserving the existing standard security features of SPI Flash memories, these chips have a built-in additional protections against unauthorized access such as: HMAC-SHA-256 crypto accelerator, OTP Root Keys, volatile HMAC Keys and Monotonic Flash Counters. They operate at a clock frequency up to 133 MHz and achieve maximum transfer rate of 532 Mbps. They have 2.7 – 3.6 V or 1.7 – 1.95 V power supply and offer densities of 64 Mb – 2 Gb.
    • TrustME Secure Memory – Flash memories using a Serial Peripheral Interface (SPI) with a standard/dual/quad/octal output, especially designed for industrial applications, IoT applications and universal integrated circuit cards – UICC (SIM cards). In addition to preserving the existing standard security features of SPI Flash memories they also have additional safety functions ensuring secure boot and system level resilience and providing strong protection for operations such as over-the-air updates and device authentication. They are Common Criteria EAL2 (Evaluation Assurance Level 2) or Common Criteria EAL5+ (Evaluation Assurance Level 5+) certificated. They are divided into three groups offering different functions and different capacities: W77Q (16 Mb – 1 Gb) and W75F (4 – 32 Mb) which can operate at frequencies of 50 – 133 MHz.
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