marthel.pl / offer / about winbond
  Products

 - Mobile DRAM memories
 - DRAM memories
 - Flash memories
 
 

Winbond Electronics Corporation was founded in 1987 in Hsinchu Science Park, Taiwan. Until now the Company was one of the bigest manufacturer of LSI integrated circuits (microcontrolles, memories, telecommunications ICs, computer logic ICs and sound ICs) in the world. In July 2008 was created the new company, Nuvoton Technology Corporation , as a wholly-owned subsidiary of Winbond which took over the whole Winbond's products lines of Computer Logic and Consumer Logic ICs.
Today Winbond focuses only on the Memory Products design and manufacturing with four main products groups: Mobile RAM, DRAM, Graphics DRAM and Flash Memory ICs.

Winbond is IECQ, ISO 9001, ISO 14001 and QS 9000 certified. Many of its products meet the AEC-Q100 specification and are qualified for Automotive grade.
Winbond has set up subsidiaries in the USA, Japan, and Hong Kong.

The Marthel Company has in its offer full range of Winbond's memory products.

  • Mobile DRAM


    • Pseudo SRAM (PSRAM) - a kind of memories which consist of a DRAM macro core with a traditional asynchronous SRAM interface. It is a line of 1.8 or 3.3 V products which offer 32 - 256 Mbit densities, can work with up to 133 MHz clock frequencies and feature fast access time and low power consumption. Comparing to traditional CMOS SRAMs they have a higher density, higher speed, smaller die size and DRAM compatible process.


    • Low Power SDR SDRAM (LPSDR) - a kind of SDRAMs that transfer data on only one edge of the clock signal (SDR architecture), designed with specific features to reduce power consumption. It is a line of 1.8 V products with 128 - 512 Mbit densities which can work with 133 MHz or 166 MHz clock frequencies.


    • Low Power DDR SDRAM (LPDDR) - a kind of SDRAMs that transfer data on both edges of the clock signal (DDR architecture) and achieve twice the data speed of SDR SDRAMs, designed with specific features to reduce power consumption. It is a line of 1.8 V products which offer 128 Mbit - 1 Gbit densities and can work with 166 MHz or 200 MHz clock frequencies.


    • Low Power DDR2 SDRAM (LPDDR2) - DDR SDRAMs generation 2 that transfer data on both edges of the clock signal, designed with specific features to reduce power consumption. They achieve greater data speed than LPDDRs by higher effective clock rate. It is a line of 1.8/1.2 V products which offer 256 Mbit - 2 Gbit densities and can work with 400 MHz or 533 MHz clock frequencies.


  • DRAM


    • SDRAM - synchronous DRAMs that transfer data on only one clock transition (SDR - Single Data Rate), designed to process data at the same clock speed as the CPU. It is a line of 3.3 V products which offer 16 - 256 Mbit densities and can work with 133 - 200 MHz clock frequencies.


    • DDR SDRAM - Double-Data-Rate Synchronous DRAMs that achieve twice the data speed of SDR SDRAMs by transferring data on both edges of the clock signal. It is a line of 2.5 V products which offer 64 - 256 Mbit densities They can work with 166 - 250 MHz clock frequencies and are compliant to DDR-333, DDR-400 and DDR-500 specifications.


    • DDR2 SDRAM - Double-Data-Rate Synchronous DRAMs generation 2 which achieve greater data speed than DDR SDRAMs by higher effective clock rate. It is a line of 1.8 V products which offer 128 Mbit - 2 Gbit densities and are compliant to DDR2-667, DDR2-800 and DDR2-1066 specifications.


    • DDR3 SDRAM - Double-Data-Rate Synchronous DRAMs generation 3 which achieve greater data speed than DDR2 SDRAMs by higher effective clock rate. It is a line of 1.5 V products which offer 1 Gbit density and are compliant to DDR3-1333, DDR3-1600 and DDR3-1866 specifications.
      This group also includes high-speed graphics GDDR3 memories, designed for a wide range of graphics applications like VGA graphics cards, notebook PCs and game consoles. It is a line of 1.8 V products which offer 1 Gbit density and can achive the transfer rate up to 1 Gbps.


  • Flash


    • Parallel NOR Flash memories - high speed non-volatile NOR type memories with parallel address and data buses, up to 100 K program/erase cycles, low power consumption and 20-year data retention. They have 3.3 V power supply and offer 32 - 512 Mbit densities.


    • Serial NOR Flash memories - high speed non-volatile NOR type memories using a Serial Peripheral Interface (SPI) with a standard/dual (X series) or standard/dual/quad output (Q series). They operate at a clock frequency up to 104 MHz and achieve maximum transfer rate of 208 Mbps in case of X series and 416 Mbps in case of Q series. They have 2.7 (2.3) - 3.6 V or 1.65 - 1.95 V power supply, offer 512 Kbit - 512 Mbit densities and feature limited space, pins and power consumption, up to 100 K program/erase cycles and 20-year data retention.


    • Parallel SLC NAND Flash memories - high speed non-volatile SLC NAND type memories with parallel address/data bus, up to 100 K program/erase cycles, low power consumption and 10-year data retention. They have 2.7 - 3.6 V or 1.7 - 1.95 V power supply and offer 1, 2 or 4 Gbit densities.


    • Serial NAND Flash memories - high speed non-volatile NAND type memories using a Serial Peripheral Interface (SPI) with a standard/dual/quad output. These products are an extension of the Serial NOR Flash memories at higher densities: 1 Gbit and 2 Gbit. They can operate at a clock frequency up to 104 MHz and achieve maximum transfer rate of 416 Mbps. They are produced in 8-pin or 24-pin packages and feature limited power consumption, up to 100 K program/erase cycles and 10-year data retention.


    • NAND Based MCP memories - Multi-Chip Package (MCP) memory product family consisting of a parallel NAND Flash memory and a mobile Low Power DDR SDRAM or Low Power DDR2 SDRAM memory in one package to provide the most space effective solutions that save areas on PCBs. They are powered by a voltage of 1.7 - 1.95 V and offer 512 Mbit, 1 Gbit or 2 Gbit densities in various configurations. They are produced in BGA packages.


    • SpiStack Flash memories - Serial Flash memory product family consisting of a multiple SpiFlash dies which can be stacked with various combinations of NOR and NAND dies in one small package to provide the most space effective solutions for code and data storage. They use serial NOR Flash memories with the density of 16 - 128 Mbit and 1 Gbit serial NAND Flash memories powered by a voltage of 2.7 - 3.6 V or 1.7 - 1.95 V. They are produced in WSON8 or SOIC16 packages.


    • TrustME Authentication Flash - Trusted Memory Environment product family that can work with a multitude of microprocessors or SoCs to raise the level of security in many systems with true end-to-end security. These are multi-chip packaged devices with Winbond’s Serial Flash memories using a Serial Peripheral Interface (SPI). The TrustME Secure Flash series, in addition to preserving the existing standard security features of SPI Flash memories, has a built-in additional protections against unauthorized access such as: HMAC-SHA-256 crypto accelerator, OTP Root Keys, volatile HMAC Keys and Monotonic Flash Counters. They operate at a clock frequency up to 104 MHz and achieve maximum transfer rate of 416 Mbps. They have 2.7 - 3.6 V or 1.65 - 1.95 V power supply and offer 32 Mbit - 1 Gbit densities.

 
 
Products

 - Mobile DRAM memories
 - DRAM memories
 - Flash memories